Tülay SERİN

Ag / a-Si:H (n-type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE

ISSN: 1303-6009
Yayın Aralığı: Yılda 2 Sayı
Başlangıç: 2019
Yayıncı: Ankara Üniversitesi

Öz In this study we examined the Schottky diode characteristies of Ag / a-Si:H/ a»Si:H (n- type) / Cr devices. Thin films of amorphous Silicon prepared by an RF magnetron sputter techni- que on chromium contacted glass substrates and transparent silver electrodes (area 7.85xl0“3 cm2) were applied under a vacuum of 10-5 Ton. The cunent-voltage-temperature characteristies were measured in the dark and under illumination. The barrier height of silver rectifier contact was determined using Bethe’s isothermal termionic emission theory and Fowler photoelectrical theory 0 B n = 1.36 eV, 1.47 eV respeetively.

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