Ni/n-GaAs ve NiO/n-GaAs Diyotların Elektriksel Parametreleri Arasındaki İlişki

Bu çalışmada, Ni/n-GaAs Schottky ve p-NiO/n-GaAs heteroeklem diyotları termal buharlaştırma yöntemi ile üretilmiştir. Üretilen numunelerin elektriksel özellikleri karanlıkta ve oda sıcaklığında, akım-voltaj (I-V) ve kapasitans-voltaj (C-V) ölçümleri ile incelenmiştir. Üretilen numunelerin idealite faktörü (n), engel yüksekliği (Фb) ve seri direnci (Rs), I-V ve C-V ölçümlerinden ayrı ayrı hesaplanmıştır. Ayrıca Cheung fonksiyonları yardımıyla da n, Фb ve Rs hesaplanarak sonuçların kararlılığı tespit edilmiştir. Schottky diyot yapısının, p-n diyot yapısından daha iyi idealite faktörüne ve daha düşük engel yüksekliğine sahip olduğu belirlenmiştir.

Relationship Between Electrical Parameters of Ni/n-GaAs and NiO/n-GaAs Diodes

In this study, Ni/n-GaAs Schottky diode and p-NiO/n-GaAs heterojunction diodes were produced by thermal evaporation method. The electrical properties of the produced samples were examined by current-voltage (I-V) and capacitance-voltage (C-V) measurements in the dark and at room temperature. The ideality factor (n), barrier height (Фb) and series resistance (Rs) of the produced samples were calculated separately from I-V and C-V measurements. In addition, the stability of the results was determined by calculating n, Фb and Rs with the help of Cheung functions. It was determined that the Schottky diode structure has a better ideality factor and lower barrier height than the p-n diode structure.

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