Salih KÖSE, Murat KELLEGÖZ, Hilal ÇAKO, Seda UZKALAN

Ultrasonik Sprey Piroliz Tekniği ile Depolanan Bor-Katkılı CdS Filmlerinin İncelenmesi

Bor katkısının CdS filmlerin yapısal, yüzeysel, optik ve elektriksel özellikleri üzerindeki etkisi tartışılmıştır.Bor katkılı ince filmler, 300±5°C’de ultrasonik sprey piroliz tekniği ile kadmiyum klorid (CdCl 2 ; 0.05M),tiyüre (CS(NH 2 ) 2 ; 0.05M) ve borik asit (H 3 BO 3 ; 0.05M) sulu çözeltisi kullanılarak payreks cam üzerineçöktürülerek elde edilmişlerdir. Çöktürülen ince filmlerin optik, elektriksel, yapısal ve yüzey özellikleriUV spektrofotometre, dört prob tekniği, SEM, AFM ve XRD ile incelenmiştir. X-ışını kırınımı çalışması,filmlerin düşük boron katkıları için (011) düzleminde tercihli yönelmeye polikristalin olduğunugöstermektedir. Bununla birlikte, tercihli yönelme (002) olarak değişmiştir. Bor konsantrasyonu arttıkçatane boyu da artmıştır. Katkısız ve bor katkılı CdS ince filmlerin optik bant aralıkları 2.39-2.46 eVaralığında bulunmuştur. Tane boyutu dağılımı 30.8-115.4 nm aralığında elde edilmiştir.

Investigation of Boron-Doped CdS Films Deposited by Ultrasonic Spray Pyrolysis Technique

The influence of boron doping on the structural, surface, optical, and electrical properties of CdS films is discussed. Boron doped samples were deposited on pyrex glass slide using aqueous solution of cadmium chloride (CdCl 2 ; 0.05 M), thiourea (CS(NH 2 ) 2 ; 0.05 M) and boric acid (H 3 BO 3 ; 0.05 M) by ultrasonic spray pyrolysis technique at 300±5°C. Optical, electrical, structural and surface properties of the deposited thin films were studied by UV spectrophotometer, four probe technique, SEM, AFM, and XRD. XRD study shows that films are polycrystalline with preferred orientation through (011) plane for low boron in corporations. However, preferential orientation changed to (002). The grain size has increased with increasing boron concentration. The optical band gap of the undoped and boron doped CdS samples were found in the range of 2.39-2.46 eV. Grain size distribution is obtained in the range of 30.8-115.4 nm.

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