IGZO İnce Filme Dayalı Olarak Üretilen Heteroeklem Diyotun Elektriksel Özellikleri

Bu çalışmada, PLD tekniği kullanarak oda sıcaklığındaki SLG ve p-Si wafer üzerine 5×$10^{-2}$ ve 7×$10^{-2}$ mbaroksijen gaz basıncı altında IGZO ince filmler üretilmiş ve 300o C sıcaklıkta tavlanmışlardır. IGZO incefilmler amorf yapıda büyümüşlerdir. Oksijen gaz basıncı artarken, ince filmi oluşturan parçacıklarınboyutu büyümüştür. 7×$10^{-2}$ mbar oksijen gaz basıncı altında büyütülmüş ve tavlanmamış IGZO incefilme dayalı olarak IGZO/Si heteroeklem diyotu üretilmiş ve bu diyotun karanlık ve aydınlık şartlarda ? − ? eğrileri elde edilmiş, ideality faktörleri ve bariyer yükseklikleri hesaplanmıştır. Aydınlık ortam için, ? − ?, Cheung Cheung ve Norde metotları ile IGZO/Si heteroeklem diyotun ?, ?? and Ф? değerlerihesaplanmıştır. Bu çalışmadan elde edilen sonuçlar analiz edilmiş ve bulunan değerlerin birbirlerineyakın olduğu yorumu yapılmıştır.

Electrical Properties of The Heterojunction Diode Produced Based onIGZO Thin Film

In this study, IGZO thin films were produced on SLG and p-Si wafer at low temperature, under oxygen gas pressure of 5×$10^{-2}$ and 7×$10^{-2}$ mbar, using PLD technique and these thin films were annealed at 300oC temperature. IGZO thin films were grown in amorphous structure. As the oxygen gas pressure was increased, the particle size in the thin films were increased. IGZO/p-Si heterojunction diode was produced based on IGZO thin film that was deposited under oxygen pressure in 7×$10^{-2}$ mbar and not annealed, and ? − ? curves of this diode in darkness and under the illumination condition were obtained and then its barrier height and idelaity factor were calculated. In an illumination condition, ?, ?? and Ф? values of IGZO/Si heterojunction diode were calculated by the traditional ? − ?, Norde and Cheung Cheung methods. Results obtained in this work have been interpreted as well as concluded to be close to each other.

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