Düşük Sıcaklıklarda Au/Organometalik Kompleks/n-Si MIS Yapısının Elektriksel Özelliklerinin İncelenmesi

Geniş bir sıcaklık aralığında (100-300 K) metal-arayüzey tabaka-yarıiletken (MIS) Schottky diyotununelektriksel özellikleri akım-gerilim ölçümleri ile incelenmiştir. MIS Schottky diyotu, 300 K ve 100 K'desırasıyla 2.28 ve 4.13'e eşit idealite faktörleri (n) ile birlikte ideal olmayan akım-gerilim davranışıgöstermiştir. Diyotun deneysel engel yüksekliği değerleri, 100 K'da 0.32 eV, 300 K'da 0.76 eV olarakbelirlenmiştir. Azalan sıcaklıkla birlikte deneysel engel yüksekliğinde (BH,Φ b ) anormal bir azalma veidealite faktöründe bir artış gözlemlenmiştir. Gözlemlenen bu davranış, engel yüksekliğihomojensizliklerine atfedilmiş ve arayüzeyde yerel engel yüksekliklerinin Gauss dağılımı olduğunuvarsayılarak termiyonik emisyon mekanizması temelinde açıklanmıştır. MIS diyotunun sıcaklığa bağlıakım-gerilim karakteristikleri, sırasıyla 1.17 eV ve 0.81 eV ortalama engel yükseklikleri ile birlikte 146 mVve 94 mV standart sapmaları verenikili Gauss dağılımı göstermiştir. İki sıcaklık bölgesi için modifiye̅ b ve A ∗ 1.18edilmiş ln(I 0 /T 2 ) -q 2 σ s2 2k 2 T 2 'ye karşı 1/kT eğrisinden sırasıyla 200-300K sıcaklık bölgesinde Φ2222eV ve 20.8 A/cm K ve 100-200K sıcaklık bölgesinde 0.82 eV ve 11.8 A/cm K olarak belirlenmiştir.Ayrıca, MIS diyotunun karakterizasyonu için kapasitans-gerilim ölçümleri uygulanmıştır.C-V ölçümlerianalizinden elde edilen 0.88 eV engel yüksekliği değeri, oda sıcaklığında akım-gerilim ölçümlerindenelde edilen 0.76 eV'den daha yüksek olarak elde edilmiştir.

Investigation of Electrical Properties of Au/Organometallic Complex/n- Si MIS Structure at Low Temperatures

The electrical properties of the metal-interface layer-semiconductor (MIS) Schottky diode were investigated via current–voltage measurements over a wide temperature range (100–300 K). The MIS Schottky diode showed non-ideal current–voltage behavior with ideality factors (n) which equal to 2.28 and 4.13 at 300 K and 100 K, respectively. The values of the experimental barrier height values of the diode were determined as 0.32 eV at 100 K and 0.76 eV at 300 K, in turn. An abnormal decrease in the experimental barrier height (BH,Φ b ) and an increase in the ideality factor were observed with decreasing temperature. This observed behavior was attributed to the barrier height inhomogeneities and were explained on the basis of thermionic emission mechanism by assuming the existence of a Gaussian distribution of local barrier heights at the interface. Temperature dependent current–voltage characteristics of the MIS diode has shown double Gaussian distribution giving mean barrier heights of 1.17 eV and 0.81 eV and with standard deviations of 146 mV and 94 mV, respectively. The modified ̅ b and A ∗ as 1.18 eV and ln(I 0 /T 2 ) -q 2 σ s2 2k 2 T 2 versus 1/kT plot for the two temperature regions gives Φ 20.8 A/cm 2 K 2 at 200-300K, and 0.82 eV and 11.8 A/cm 2 K 2 at 100-200K, respectively. In addition, the capacitance–voltage measurements were applied for characterization of the MIS diode. From the analysis of capacitance–voltage measurements, the barrier height value of 0.88 eV was found to be higher than that of 0.76 eV obtained from the current–voltage measurements at room temperature.

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