Alternatif InGaN İnce Film Üretim Yöntemi: Termiyonik Vakum Ark

Bu çalışmanın kapsamında, amorf cam alttaşlar üzerine indiyum galyum nitrat ince filmler hızlı ve düşükmaliyetli olan termiyonik vakum ark yöntemi ile doğrudan üretilmiştir. İnce filmler tek bir deneyde alttaşısıtma uygulamadan 2 farklı anot-alttaş arası mesafede biriktirilmiştir. Üretilen InGaN ince filmlerinyapısal ve yüzeysel özellikleri uygun analiz yöntemleri ile belirlenmiştir. X-ışını kırınım (XRD) cihazı ileXRD desenleri belirlenerek kristal boyutları Scherrer yöntemi tarafından hesaplanmıştır. Hekzagonalwurtzite kristal yapılı %50 In katkılı GaN filmlerin üretildiği belirlenmiştir. InGaN ince filmlerin yüzeyselözellikleri ise atomik kuvvet mikroskobu aracılığıyla tespit edilmiştir. Yüzey özellikleri belirlenirkenhistogram analizleri ve boyut analizleri yapılmıştır. GaN temelli cihazların üretiminde termiyonik vakumark yönteminin alternatif üretim sistemi olduğu görülmüştür.

An Alternative InGaN Thin Film Production Method: Thermionic Vacuum Arc

In the scope of this study, indium gallium nitride thin films onto amorphous glass substrates were directly produced by using thermionic vacuum arc method which rapid and low cost. These thin films were produced in a single experiment at two different anode-substrate distance without substrate heating. The structural and surface properties of the produced InGaN thin films were determined by appropriate analysis methods. The XRD patterns were determined by X-ray diffraction (XRD) device and its crystalline sizes were calculated using the Scherrer method. It was determined that 50% In-doped GaN films with hexagonal wurtzite crystal structure were produced. The surface properties of InGaN thin films were determined by atomic force microscopy. Histogram analysis and dimension analysis were performed while surface properties were determined. It has been found that the thermionic vacuum arc method is an alternative production system to the production of GaN-based devices.

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