DC~1.6 GHZ GaAS MESFET’LERE SAHİP DAĞILMIŞ PARAMETRELİ KUVVETLENDİRİCİ

Bu çalışmada, DC ~ 1.6 GHz bant genişliğine sahip bir dağılmış parametreli kuvvetlendirici (DA) baskı devre kartında gerçeklenmiştir. Dağılmış parametreli kuvvetlendiricinin performans parametreleri olan saçınım (S-) parametreleri ölçülmüş ve sonuçlar benzetim sonuçlarıyla kıyaslanmıştır. Yükselticinin karakterizasyonunda, devrenin aktif elemanları olan transistörlerin bazı frekanslarda verilmiş küçük-işaret mikrodalga S-parametreleri ve pasif elemanların değerleri kullanılmıştır. Elde edilen sonuçlara göre, ölçülen ve benzetilen sonuçlar nispeten uyumludur.

Anahtar Kelimeler:

Dağılmış parametreli kuvvetlendirici, Genişbant; S-parametreleri; PCB gerçekleme

A DC~1.6 Ghz Distributed Amplifier with GaAs MESFETs

In this study, a DC ~ 1.6 GHz bandwidth distributed amplifier (DA) is fabricated in printed circuit board (PCB). The scattering (S-) parameters of the distributed amplifier are measured and compared with simulated results. In characterization of the amplifier, small-signal microwave S-parameters given at some discrete frequencies of transistors are utilized. According to obtained results, it is observed that measured and simulated results are in relatively good agreement.

Keywords:

Distributed amplifier, broadband; S-parameters; PCB fabrication,

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