Simulation of storage time versus reverse bias current for $p^+$n and pin diodes
Simulation of storage time versus reverse bias current for $p^+$n and pin diodes
In this study, the reverse-recovery behaviors of pin and $p^+$ n diodes were simulated as a function of the reverse current and carrier lifetime. For this purpose, a 1-D simulation program was written to solve the semiconductor equations. MatLab partial differential equation solver was used. The reverse recovery response of pin and p+ n diodes was obtained for various values of a resistor in series and of carrier lifetime. The transient response for voltage and current was determined.
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- ISSN: 1300-0632
- Yayın Aralığı: Yılda 6 Sayı
- Yayıncı: TÜBİTAK