The Improvement Photoresponsivity of ZnO Based Photodiode with Indium Doping

The heterojunction photodiodes with undoped ZnO and Indium (In) doping ZnO thin films have been grown on p type silicon wafer by solution based spin coating method. The crystal structure analyzes of the films show that they have amorphous nature. The electrical characterizationsof diodes have been performed by classicalI-V and C-G-V technique. The minimum ideality factor of 3.97 and minimum series resistance of 7.2 kΩ have been recorded from 5% In doping ZnO/p-Si diode. The phototransient measurements show that photodiodes react fast to visible light and have a good reproducibility switching cycle. Similarly, the highest photosensitivity of 3.15×103and responsivity of 2.02 A/W have been obtained from 5% In doping ZnO/p-Si photodiode. This study indicatesthat the doping of In improves the electrical and optoelectrical performance of ZnO based photodiodes.

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