İLKNUR KARS DURUKAN, Mustafa Kemal ÖZTÜRK, Süleyman ÖZÇELİK, EKMEL ÖZBAY

Analysis of the Mosaic Defects in Graded and Non Graded InxGa1‐xN Solar Cell Structures

In this study, graded (A) InxGa1‐xN (10.5 ≤ x ≤ 18.4) and non graded (B) InxGa1‐xN (13.6 ≤ x ≤ 24.9) samples are grown on c‐oriented sapphire substrate using the Metal Organic Chemical Vapour Deposition (MOCVD) technique. The structural, optical and electrical features of the grown InGaN/GaN solar cell structures are analyzed using High Resolution X‐Ray Diffraction (HRXRD), Photoluminescense (PL), Ultraviolet (UV), current density and potential (JV) measurements. According to the HRXRD results; it is determined that the InGaN layer of the graded structure has a lower FWHM (Full width at half maximum) value. From the PL measurements, it is observed that the GaN half‐width peak value of the graded sample is narrower and the InGaN peak width value of the graded sample is larger. From UV measurements, that the graded sample has a greater band range. JV measurements determine that the performance of the graded structure is higher.

Dereceli ve Derecesiz InXGa1‐XN Güneş Hücresi Yapılarındaki Mozaik Kusurların Analizi

Bu çalışmada, dereceli InxGa1‐xN (A) (10.5 ≤ x ≤ 18.4) ve derecesiz (B) InxGa1‐ xN (13.6 ≤ x ≤ 24.9) örnekleri c yönelimli safir alttaş üzerine Metal Organik Kimyasal Buhar Biriktirme Tekniği ile büyütüldü. InGaN/GaN güneş hücresi yapıları Yüksek Çözünürlüklü X‐Ray Kırınım(HRXRD), Fotolüminesans (PL) ve Ultraviyole (UV), Akım yoğunluğu ve potansiyel ölçümleri (JV) ile analiz edildi. XRD sonuçlarına göre dereceli InGaN yapısı düşük FWHM değerlerine sahiptir. PL ölçümlerinde ise dereceli yapıdaki GaN’ın ortalama yarıgenişlik değeri daha dar ve InGaN’ ın pik genişliği dereceli yapı olması nedeniyle daha geniştir. UV ölçümlerinden dereceli yapının genişleyen bant aralığına sahip olduğu görüldü. JV ölçümlerinden ise dereceli yapının performansının daha yüksek olduğu belirlendi.

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