KÜPRİK OKSİT/SİLİSYUM HETEROEKLEMLİ NANODİYOTLARIN FOTOVOLTAİK ÖZELLİKLERİ

Aygıt uygulamaları için nanoyapılı materyallerin sentezlenmesinde, ucuz olması sebebiyle solüsyon-bazlı yaklaşımlar kullanılır. Bu çalışmada, Küprik oksit/Silisyum p-n heteroeklemli nanodiyotların fotovoltaik performansı incelenmiştir. Yüksek yoğunluklu ve dikey olarak düzgün sıralanmış Silisyum nanotel kümeleri, n-tipi (100)-yönelimli kristal Silisyum dilimi üzerine akımsız dağlama tekniği ile sentezlendi. Daha sonra, üç-boyutlu heteroyapılar üretmek için p-tipi Küprik oksit ince filmleri Silisyum nanoteller üzerine kimyasal depolama yöntemi ile kaplandı. Akım-gerilim (I-V) ölçümleri, üretilen heteroeklemli diyotların fotovoltaik özelliklerini incelemek için kullanıldı. AM 1.5 G aydınlatma koşulları altında en yüksek güç dönüştürme verimliliği %0,58 olarak bulundu. Ayrıca, 4001100 nm arasında geniş bir dalgaboyu spektrumunda oldukça yüksek dış kuantum verimi saptandı

Photovoltaic Characteristics of Cupric Oxide/Silicon Heterojunction Nanodiodes

Solution-based approaches are used to prepare nanostructured materials for device applications to reduce material production and device fabrication costs. In this study, photovoltaic performance of Cupric oxide/Silicon p-n heterojunction nanodiodes were investigated. Highly dense and vertically well-aligned Silicon nanowire arrays were successfully synthesized on a n-type (100)-oriented Si wafer through electroless etching technique. p-type Cupric oxide thin films were then coated onto Silicon nanowires via chemical bath deposition method to form three-dimensional heterostructures. Current-voltage (I-V) measurements were utilized to examine photovoltaic properties of the fabricated heterojunction diodes. The maximum power conversion efficiency were found to be 0.58% under simulated solar irradiation of AM 1.5 G. Furthermore, relatively high external quantum efficiency over a broadband spectrum of wavelengths between 400-1100 nm was detected

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