KUANTUM NOKTA YAPILARDA ELEKTRİK ALAN ETKİSİNİN PERTÜRBASYON YÖNTEMİYLE İNCELENMESİ

Bu çalışmada Pertürbasyon metodu ile kuantum nokta yapılarının elektronik yapısına dış elektrik alan etkisi incelendi. Merkezinde hidrojen tipi bir safsızlık bulunan sonlu küresel simetrik sonlu potansiyelle sınırlandırılmış bir-elektronlu kuantum nokta yapısının taban ve bazı uyarılmış seviyelerin pertürbe olmamış enerji öz değerlerini ve dalga fonksiyonlarını KGA metodu ile Hartree-Fock-Roothaan (HFR) metodu birleştirilerek belirlendi. Dalga fonksiyonları, STO ların lineer bileşiminden oluşan tek-elektron spin orbitalleri alındı. Pertürbe olmamış enerji özdeğerleri ve dalga fonksiyonları kullanılarak, nokta yapısının elektronik yapısı üzerine dış elektrik alanının etkisi farklı nokta yarıçapı ve sınırlandırıcı potansiyel değerleri için pertürbasyon teorisi ile hesaplandı.

INVESTIGATED OF THE ELECTRIC FIELD EFFECT ON QUANTUM DOTS WITH PERTURBATION METHOD

In this thesis, electronic properties of Quantum dots was examined according to the position of impurity using perturbation method. Spherical quantum dot with one electron on-center hydrogenic impurity confined finite spherical potential the non-perturbed energy eigenvalues and the wave functions ground and some excited states were determined by a method consisting of a combination of the KGA method with HartreeFock-Roothaan (HFR) method. Wave functions were created a single electron spin orbitals that consist of the linear combination of Slater type orditals (STOs). The effect of the external electric field applied on the electronic structure for different dot radius and confining potential were calculated by perturbation theory using the energy eigenvalues and wave functions unperturbed

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