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PEDOT: PSS Kompozit Elektrot Kullanarak Polistiren Yalıtkanlı Organik Alan Etkili Transistörde Kanal Uzunluğu Modülasyonu

Kanal uzunluğu modülasyonlu Organik Alan Etkili Transistör (OFET), önceden oluşturulmuş indiyum kalay oksitli (ITO) kaynak-savak alt-tabaka üzerinde Poly(3-hexylthiophene) (P3HT) ve Polystyrene (PS) yalıtkan kullanarak spin kaplama yöntemi ile üretildi. Kapı Elektrodu olarak poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) kullanılmıştır. Böylece, OFET cihazının yapısı ITO/P3HT/PS/ PEDOT:PSS olarak elde edilmiştir. ITO/PS/PEDOT:PSS yapısı polimer yalıtkanının kapasitans ölçümleri için aynı yöntem kullanılarak hazırlanmıştır. OFET cihazlarının elektriksel karakterizasyonu çıkış ve transfer akım voltaj (I-V) karakteristikleri elde etmek amacıyla tam karanlıkta ve hava ortamında yapılmıştır. OFET cihazlarının eşik voltajı (VTh), alan etkili mobilite (mFET) ve akım açma/kapama oranı (Ion/off) gibi ana parametreler, ITO/PS/PEDOT:PSS yapısının kapasitans frekansı (C-f) ölçümlerinden elde edildi. Üretilen PS-OFET'lerin düşük VTh, kaydadeğer mobilite ve akım açık/kapama değerleri gibi iyi cihaz performansı sergilediği gözlenmiştir.

Anahtar Kelimeler:

Polimer kapı elektrodu, Şeffaf OFETler, Yalıtkanlar, PEDOT: PSS, Polistiren, P3HT

Channel Length Modulation in a Polystyrene Insulated Organic Field Effect Transistor Using PEDOT: PSS Composite Electrode

The Organic Field Effect Transistor (OFET) with channel length modulation was fabricated by spin coating method using a Poly(3-hexylthiophene) (P3HT) and the Polystyrene (PS) insulator on a prepatterned as source-drain Indium thin oxide (ITO) substrate. The poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) was used as gate electrode. So, the structure of OFET device is obtained as ITO/P3HT/PS/PEDOT:PSS. The ITO/PS/PEDOT:PSS structure was prepared using same method for capacitance measurements of a polymer insulator. Electrical characterization of OFET devices were held in total darkness and in air ambient for the purpose of achieving output and transfer current-voltage (I-V) characteristics. The main parameters such as the threshold voltage (VTh), field effect mobility (mFET) and current on/off ratio (Ion/off) of the OFET devices were extracted from capacitance-frequency (C-f) plot of the ITO/PS/PEDOT:PSS structure. It was found that fabricated PS-OFETs exhibit good device performance such as low VTh, remarkable mobility, and Ion/off values.

Keywords:

P3HT Polymer gate electrode, Transparent OFETs, Insulators, PEDOT:PSS, Polystyrene, P3HT,

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