Theoretical Investigation of W(CO)6 and CO Selenization Process

Theoretical Investigation of W(CO)6 and CO Selenization Process

Detailed atomic-level insight into the mechanism of $W(CO)_6$ and CO selenization is essential for the fabrication of cheap and environmentally benign transition metal chalcogenides such as $MoS_2$ and $WSe_2$. Earlier discussions in literature have focused mainly on the CO methanation by sulfur and its derivatives but $H_2Se$ mediated CO methanation at the atomic level is yet to be explored. First-principles calculations and ReaxFF-based molecular dynamics simulations are conducted here to explore the relative stabilities of intermediates formed during the gas-phase interactions of $W(CO)_6$ and $H_2Se$, determined associated reaction energies and kinetic barriers. The methanation of CO, which is released from the organometal, by H2Se is further investigated. The results indicate that the chain reactions of $W(CO)_6$ and H2Se lead to the formation of a thermodynamically stable end product of $W(SeH)_2Se_2$. Depending on the temperature, $W(HSe)_2Se_2$ is expected to go through a last uphill reaction by releasing H2Se into the environment and evolving into a $WSe_3$ molecule. Additionally, the dehydrogenation of organometallic molecules is thermodynamically feasible but kinetically controlled, requiring a significant activation energy. When all CO groups are released from the W atom, the H2 release from W-compund becomes nearly barrierless. Since CO radical groups are dominant byproducts formed during the MOCVD chain reactions but in a chalcogen rich environment, this work also shed light into the CO selenization during the growth of transition metal diselenides $(e.g., WSe_2, MoSe_2, CrSe_2)$ and discusses the formation of potential products such as $CSe_2, CH_4, H_2Se, CO, H_2O, Se_2.$

___

  • [1] A. Eftekhari, “Tungsten Dichalcogenides (WS2, WSe2, and WTe2): Materials Chemistry and Applications,” J. Mater. Chem. A, vol. 5, no. 35, pp. 18299–18325, 2017.
  • [2] T.H. Choudhury, X. Zhang, Z.Y.A. Balushi, M. Chubarov, J.M. Redwing, “Epitaxial Growth of 2D Layered Transition Metal Dichalcogenides,” ArXiv190903502 Cond-Mat 2019. [3] H. Qin, Q.-X. Pei, Y. Liu, Y.-W. Zhang, “The Mechanical and Thermal Properties of MoS2–WSe2 Lateral Heterostructures,” Phys. Chem. Chem. Phys., vol. 21, no. 28, pp. 15845–15853, 2019.
  • [4] W. Choi, N. Choudhary, G.H. Han, J. Park, D. Akinwande, Y.H. Lee, “Recent Development of Two-Dimensional Transition Metal Dichalcogenides and Their Applications,” Mater. Today, vol. 20, no. 3, 116–130, 2017.
  • [5] D. Andrzejewski, H. Myja, M. Heuken, A. Grundmann, H. Kalisch, A. Vescan, T. Kümmell, G. Bacher, “Scalable Large-Area p–i–n Light-Emitting Diodes Based on WS2 Monolayers Grown via MOCVD,” ACS Photonics, vol. 6, no. 8, pp. 1832–1839, 2019.
  • [6] X. Zhang, F. Zhang, Y. Wang, D.S. Schulman, T. Zhang, A. Bansal, N. Alem, S. Das, V.H. Crespi, M. Terrones, J.M. Redwing, “Defect-Controlled Nucleation and Orientation of WSe2 on HBN: A Route to Single-Crystal Epitaxial Monolayers,” ACS Nano, vol. 13, no. 3, pp. 3341–3352, 2019.
  • [7] B.D. Keller, A. Bertuch, J. Provine, G. Sundaram, N. Ferralis, J.C. Grossman, “Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers,” Chem. Mater., vol. 29, no. 5, pp. 2024–2032, 2017.
  • [8] W. Hao, C. Marichy, C. Journet, “Atomic Layer Deposition of Stable 2D Materials,” 2D Mater., vol. 6, no. 1, 012001, 2018.
  • [9] G.-H. Park, K. Nielsch, A. Thomas, “Atomic Layer Deposition: 2D Transition Metal Dichalcogenide Thin Films Obtained by Chemical Gas Phase Deposition Techniques (Adv. Mater. Interfaces 3/2019),” Adv. Mater. Interfaces, vol. 6, no. 3, 1970024, 2019.
  • [10] X. Zhang, Z.Y. Al Balushi, F. Zhang, T.H. Choudhury, S.M. Eichfeld, N. Alem, T.N. Jackson, J.A. Robinson, J.M. Redwing, “Influence of Carbon in Metalorganic Chemical Vapor Deposition of Few-Layer WSe2 Thin Films,” J. Electron. Mater., vol. 45, no. 12, pp. 6273–6279, 2016. [11] T.H. Choudhury, H. Simchi, R. Boichot, M. Chubarov, S.E. Mohney, J.M. Redwing, “Chalcogen Precursor Effect on Cold-Wall Gas-Source Chemical Vapor Deposition Growth of WS2,” Cryst. Growth Des., vol. 18, no. 8, pp. 4357–4364, 2018.
  • [12] Y. Gong, X. Zhang, J.M. Redwing, T.N. Jackson, “Thin Film Transistors Using Wafer-Scale Low-Temperature MOCVD WSe2,” J. Electron. Mater., vol. 45, no. 12, pp. 6280–6284, 2016.
  • [13] L. Jiao, H.J. Liu, J.L. Chen, Y. Yi, W.G. Chen, Y. Cai, J.N. Wang, X.Q. Dai, N. Wang, W.K. Ho, M.H. Xie, “Molecular-Beam Epitaxy of Monolayer MoSe2: Growth Characteristics and Domain Boundary Formation,” New J. Phys., vol. 17, no. 5, 053023, 2015.
  • [14] Y. Zhang, T.-R. Chang, B. Zhou, Y.-T. Cui, H. Yan, Z. Liu, F. Schmitt, J. Lee, R. Moore, Y. Chen, H. Lin, H.-T. Jeng, S.-K. Mo, Z. Hussain, A. Bansil, Z.-X. Shen, “Direct Observation of the Transition from Indirect to Direct Bandgap in Atomically Thin Epitaxial MoSe2,” Nat. Nanotechnol., vol. 9, no. 2, pp. 111–115, 2014.
  • [15] H.J. Liu, L. Jiao, L. Xie, F. Yang, J.L. Chen, W.K. Ho, C.L. Gao, J.F. Jia, X.D. Cui, M.H. Xie, “Molecular-Beam Epitaxy of Monolayer and Bilayer WSe2: A Scanning Tunneling Microscopy/Spectroscopy Study and Deduction of Exciton Binding Energy,” 2D Mater., vol. 2, no. 3, 034004, 2015.
  • [16] M. Nakano, Y. Wang, Y. Kashiwabara, H. Matsuoka, Y. Iwasa, “Layer-by-Layer Epitaxial Growth of Scalable WSe2 on Sapphire by Molecular Beam Epitaxy,” Nano Lett., vol. 17, no. 9, pp. 5595–5599, 2017.
  • [17] Y. Xuan, A. Jain, S. Zafar, R. Lotfi, N. Nayir, Y. Wang, T.H. Choudhury, S. Wright, J. Feraca, L. Rosenbaum, JM Redwing, V. Crespi, A.C.T. van Duin, “Multi-Scale Modeling of Gas-Phase Reactions in Metal-Organic Chemical Vapor Deposition Growth of WSe2,” J. Cryst. Growth, vol. 527, 125247, 2019.
  • [18] A.D. Bochevarov, E. Harder, T.F. Hughes, J.R. Greenwood, D.A. Braden, D.M. Philipp, D. Rinaldo, M.D. Halls, J. Zhang, R.A. Friesner, “Jaguar: A High-Performance Quantum Chemistry Software Program with Strengths in Life and Materials Sciences,” Int. J. Quantum Chem., vol. 113, no. 18, pp. 2110–2142, 2013.
  • [19] Amsterdam Modeling Suite Making Computational Chemistry Work For You https://www.scm.com/ (accessed 2020 -11 -10).
  • [20] K. Chenoweth, A.C.T. van Duin, W.A. Goddard, “ReaxFF Reactive Force Field for Molecular Dynamics Simulations of Hydrocarbon Oxidation,” J. Phys. Chem. A, vol. 112, no. 5, pp. 1040–1053, 2008.
  • [21] K. Momma, F. Izumi, “VESTA 3 for Three-Dimensional Visualization of Crystal, Volumetric and Morphology Data,” J. Appl. Crystallogr., vol. 44, no. 6, pp. 1272–1276, 2011.
  • [22] S.M. Eichfeld, L. Hossain, Y.-C. Lin, A.F. Piasecki, B. Kupp, A.G. Birdwell, R.A. Burke, N. Lu, X. Peng, J. Li, A. Azcatl, S. McDonnell, R.M. Wallace, M.J. Kim, T.S. Mayer, J.M. Redwing, J.A. Robinson, “Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition,” ACS Nano, vol. 9, no. 2, pp. 2080–2087, 2015.
  • [23] K.L. Joshi, S. Raman, A.C.T. van Duin, “Connectivity-Based Parallel Replica Dynamics for Chemically Reactive Systems: From Femtoseconds to Microseconds,” J. Phys. Chem. Lett., vol. 4, no. 21, pp. 3792–3797, 2013.
  • [24] K.M. Bal, E.C. Neyts, “Merging Metadynamics into Hyperdynamics: Accelerated Molecular Simulations Reaching Time Scales from Microseconds to Seconds,” J. Chem. Theory Comput., vol. 11, no. 10, pp. 4545–4554, 2015.
  • [25] K.M. Bal, E.C. Neyts, “Direct Observation of Realistic-Temperature Fuel Combustion Mechanisms in Atomistic Simulations,” Chem. Sci., vol. 7, no. 8, pp. 5280–5286, 2016.