SILAR yöntemi ile büyütülen katkısız ve Zn katkılı CdO yarıiletken ince filmlerinin yapısal, optik ve morfolojik özelliklerinin incelenmesi

Yapılan çalışmada SILAR yöntemi ile oda sıcaklığında katkısız ve farklı oranlarda Zn katkılı CdO yarıiletken ince filmlerinin büyütülebildiği gösterilmiştir. Numunelerde Zn katkısının yapısal, optik ve morfolojik özelliklere nasıl etki ettiğinin gözlemlenebilmesi için numunelerin XRD, soğurma ve SEM ölçümleri alınmıştır. XRD ölçümleri ile numunelerin kübik yapıda ve 33° ve (111), 38° ve (200), 55° ve (220), 66° ve (311), 69° ve (222) derece ve düzlemlerde kristal yapıya sahip olduğu gözlenmiştir. Soğurma ölçümleri ile hesaplanan direkt band aralıklarının CdO yapısı içerisinde Zn katkısı ile önce azaldığı ve sonrasında Zn katkı oranına bağlı olarak arttığı gözlenmiştir. Alınan SEM ölçümleri ile katkısız ve Zn katkılı CdO yüzey morfolojisinin Zn katkısı ile değişim sergilediği gözlenmiştir.

Investigation of structural, optical and morphological properties of undoped and Zn doped CdO semiconductor thin films grown by SILAR method

In the study, it was shown that undoped and Zn-doped CdO semiconductor thin films can be grown at room temperature by SILAR method. XRD, absorption and SEM measurements of the samples were taken to observe how the Zn addition affects the structural, optical and morphological properties of the samples. With XRD measurements it was observed that the samples had cubic structure and crystal structure at 33° and (111), 38° and (200), 55° and (220), 66° and (311), 69° and (222) degrees and planes respectively. It was observed that the direct band gaps calculated by the absorption measurements decreased with the Zn doping in the CdO structure and then increased with the Zn doping ratio. It was observed that the undoped and Zn-doped CdO surface morphology exhibited a change with the doping Zn.

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