Çiğdem Ş. GÜÇLÜ

A Comparison Electronic Specifications of the MS & MPS type Schottky Diodes (SDs) via Utilizing Voltage-Current (V-I) Characteristics

A Comparison Electronic Specifications of the MS & MPS type Schottky Diodes (SDs) via Utilizing Voltage-Current (V-I) Characteristics

Gazi University Journal of Science Part A: Engineering and Innovation

2023-Cilt: 10 - Sayı: 1

62-69

(TeO2:Cu-doped PVP) interlayer, On performance MS, MPS type SDs, Difference between calculation methods, Density of surface states

(TeO2:Cu-doped PVP) Interlayer, On Performance MS MPS Type SDs, Difference Between Calculation Methods, Density of Surface States

30819