Ag/TiO2/n-InP SCHOTTKY BARİYER DİYOTUN AKIM-VOLTAJ KARAKTERİSTİKLERİ

Ag/TiO2/n-InP/Au Schottky bariyerli diyotların akım-voltaj karakteristikleri 300-400 K sıcaklık aralığında incelendi. Metal ile yarıiletken arasına 120 Å kalınlığında TiO2 film tabakası oluşturuldu. Diyotun ileri beslem akım-voltaj (I-V) karakteristiklerinden termiyonik emisyon modeline göre, sıfır beslem bariyer yüksekliği ve idealite faktörü parametreleri hesaplandı. Parametrelerin sıcaklığa bağlı olarak değiştiği ve sıcaklık artarken bariyer yüksekliğinin arttığı ve idealite faktörünün azaldığı görüldü.

Anahtar Kelimeler:

n-InP, Schottky bariyeri, bariyer yüksekliği, idealite faktörü

CURRENT-VOLTAGE CHARACTERISTICS OF Ag/TiO2/n-InP SCHOTTKY BARRIER DIODE

Current-voltage (I-V) characteristics of Ag/TiO2/n-InP Schottky barrier diodes have been investigated in the temperature range 300-400 K . Here TiO2 film with 120 Å thickness has been used as interfacial layer between metal and semiconductor layers. The zero-bias barrier height (Fb0) and ideality factor n determined from forward bias I-V characteristics were found strongly dependent on temperature. We calculated parameters of the diode, by using Termoionic Emission Theory (TE), we have seen that the results are in accordiance with the theory. According to these results ideality factor n decrease and barrier height (Fb0) increase with an increase in temperature.

Keywords:

InP, Schottky barrier, barrier height, ideality factor,

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[1] H. Çetin, E. Ayyıldız, “Electrical characteristics of Au, Al, Cu/n-InP Schottky contacts formed on chemically cleaned and air exposed n-InP surface”, Physica B, 394, 93-99,( 2007)
[2] S. Sankar Naik, V. Rajagopal Reddy, Chel-Jong Choi, Jong Seong Bae, ”Electrical and structural properties of double metal structure Ni/V Schottky contacts on n-InP after rapid thermal process” J. Mater. Sci., 46, 558-565, (2010)
[3] H. Çetin, E, Ayyıldız, ”On barrier height inhomogeneities Of Au And Cu/N-Inp Schottky contacts”, Physica B, 405, 559, (2010)
[4] S. Miyazaki, T.C. Lin, C. Nishida, H.T. Kaibe, T. Okumura, ”Morphological and electrical characterization of Al/Ni/n-lnP contacts with tapered insertion Ni-layer”, Electron Mater, 25,577,( 1996)
[5] W.C, Huang, Cai Dong-Rong,” International workshop on junction technology”, p 295,( 2006)
[6] V. Janardhanam, A. Ashok Kumar, V. Rajagopal Reddy, P. Narasimha Reddy,”Effects of annealing temperature on electrical and structural properties of Mo/n-InP (100) Schottky contacts”, Surf. Interface Anal., 41, 905,( 2009)
[7] E.H. Rhoderick, R.H. Williams, ”Metal-semiconductor contacts”, 2nd edition Clarendon pres, Oxford, (1988)
[8] R.H. Williams, G.Y. Robinson, ”Physics and chemistry of III-V compound semiconductor interfaces”, Pleneum press, New York, (1985)
[9] M. Baskhar Reddy, A. Ashok Kumar, V. Janardhanam, V. Rajagopal Reddy, P. Narasimha Reddy, ”Current-voltage-temperature(I-V-T) characteristics of Pd/Au Schottky contacts on n-InP (111)”, Current Applied Physics. 9, 972-977, (2009)