Quantum Transport Properties of InAs NWFET with Surface Traps

The quantum transport properties of InAs nanowire field effect transistor (NWFET) have been calculated and analyzed depending on the surface trap concentrations. Surface traps can be either impurity atoms, dangling bonds or structural deformations. Here, we have left some In and As atoms unsaturated to obtain surface traps. Our calculations show that the on-state voltage increases as the surface trap concentration increases. Within an equivalent circuit model, we have found that the effective field mobility is as low as 250 cm2/V.s following with small transconductance value of 2.4 nS for our simulated device. This shows that surface traps significantly effect the benchmarking properties of InAs NWFET.

Keywords:

Nanowire FET, Quantum transport, Surface traps, Quantum conductance Ballistic transport, Device modeling,

Tam Metin

___

Bryllert, T., Samuelson, L., Jensen, L. E., & Wernersson, L. (2005). Vertical high mobility wrap-gated InAs nanowire transistor. 63rd Device Research Conference Digest, 2005. DRC ’05., 1, 157–158. https://doi.org/10.1109/DRC.2005.1553100
Chuang, S., Gao, Q., Kapadia, R., Ford, A. C., Guo, J., & Javey, A. (2013). Ballistic InAs Nanowire Transistors. Nano Letters, 13(2), 555–558. https://doi.org/10.1021/nl3040674
Clément, N., Nishiguchi, K., Fujiwara, A., & Vuillaume, D. (2010). One-by-one trap activation in silicon nanowire transistors. Nature Communications, 1(1), 92. https://doi.org/10.1038/ncomms1092
Cui, Y., Zhong, Z., Wang, D., Wang, W. U., & Lieber, C. M. (2003). High Performance Silicon Nanowire Field Effect Transistors. Nano Letters, 3(2), 149–152. https://doi.org/10.1021/nl025875l
Dayeh, S. A., Aplin, D. P. R., Zhou, X., Yu, P. K. L., Yu, E. T., & Wang, D. (2007). High Electron Mobility InAs Nanowire Field-Effect Transistors. Small, 3(2), 326–332. https://doi.org/https://doi.org/10.1002/smll.200600379
del Alamo, J. A. (2011). Nanometre-scale electronics with III–V compound semiconductors. Nature, 479(7373), 317–323. https://doi.org/10.1038/nature10677
Hasegawa, S. (2000). Surface-state bands on silicon as electron systems in reduced dimensions at atomic scales. Journal of Physics: Condensed Matter, 12, R463. https://doi.org/10.1088/0953-8984/12/35/201
Huang, Y., Duan, X., Cui, Y., & Lieber, C. M. (2002). Gallium Nitride Nanowire Nanodevices. Nano Letters, 2(2), 101–104. https://doi.org/10.1021/nl015667d
José M Soler, Emilio Artacho, Julian D Gale, Alberto García, Javier Junquera, Pablo Ordejón, & Daniel Sánchez-Portal. (2002). The SIESTA method for ab initio order-N materials simulation. Journal of Physics: Condensed Matter, 14(11), 2745. https://doi.org/10.1088/0953-8984/14/11/302
Lee, S. H., Shin, S.-H., Madsen, M., Takei, K., Nah, J., & Lee, M. H. (2018). A soft lithographic approach to fabricate InAs nanowire field-effect transistors. Scientific Reports, 8(1), 3204. https://doi.org/10.1038/s41598-018-21420-y
Lynall, D., Nair, S. v, Gutstein, D., Shik, A., Savelyev, I. G., Blumin, M., & Ruda, H. E. (2018). Surface State Dynamics Dictating Transport in InAs Nanowires. Nano Letters, 18(2), 1387–1395. https://doi.org/10.1021/acs.nanolett.7b05106
Nadj-Perge, S., Frolov, S. M., Bakkers, E. P. A. M., & Kouwenhoven, L. P. (2010). Spin–orbit qubit in a semiconductor nanowire. Nature, 468(7327), 1084–1087. https://doi.org/10.1038/nature09682
Perdew, J. P., Burke, K., & Ernzerhof, M. (1996). Generalized Gradient Approximation Made Simple. Physical Review Letters, 77(18), 3865–3868. https://doi.org/10.1103/PhysRevLett.77.3865
Schubert, E. (1993). Doping in III-V Semiconductors (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering). Cambridge: Cambridge University Press. doi:10.1017/CBO9780511599828
Supriyo Datta. (1997). Electronic Transport in Mesoscopic Systems (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering, Series Number 3.
Troullier, N., & Martins, J. (1990). A straightforward method for generating soft transferable pseudopotentials. Solid State Communications, 74(7), 613–616. https://doi.org/https://doi.org/10.1016/0038-1098(90)90686-6
Tseng, A. C., Lynall, D., Savelyev, I., Blumin, M., Wang, S., & Ruda, H. E. (2017). Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors. Sensors, 17(7). https://doi.org/10.3390/s17071640
Yeu, I. W., Han, G., Park, J., Hwang, C. S., & Choi, J.-H. (2019). Equilibrium crystal shape of GaAs and InAs considering surface vibration and new (111)B reconstruction: ab-initio thermodynamics. Scientific Reports, 9(1), 1127. https://doi.org/10.1038/s41598-018-37910-y
Zhu, H. (2017). Semiconductor Nanowire MOSFETs and Applications. In Nanowires - New Insights. InTech. https://doi.org/10.5772/67446

___

Bibtex	@araştırma makalesi { jist1232557, journal = {Journal of the Institute of Science and Technology}, eissn = {2536-4618}, address = {}, publisher = {Iğdır Üniversitesi}, year = {2023}, volume = {13}, number = {3}, pages = {1653 - 1662}, doi = {10.21597/jist.1232557}, title = {Quantum Transport Properties of InAs NWFET with Surface Traps}, key = {cite}, author = {Ipek, Semran and Genç, İbrahim} }
APA	Ipek, S. & Genç, İ. (2023). Quantum Transport Properties of InAs NWFET with Surface Traps . Journal of the Institute of Science and Technology , 13 (3) , 1653-1662 . DOI: 10.21597/jist.1232557
MLA	Ipek, S. , Genç, İ. "Quantum Transport Properties of InAs NWFET with Surface Traps" . Journal of the Institute of Science and Technology 13 (2023 ): 1653-1662 <
Chicago	Ipek, S. , Genç, İ. "Quantum Transport Properties of InAs NWFET with Surface Traps". Journal of the Institute of Science and Technology 13 (2023 ): 1653-1662
RIS	TY - JOUR T1 - Quantum Transport Properties of InAs NWFET with Surface Traps AU - SemranIpek, İbrahimGenç Y1 - 2023 PY - 2023 N1 - doi: 10.21597/jist.1232557 DO - 10.21597/jist.1232557 T2 - Journal of the Institute of Science and Technology JF - Journal JO - JOR SP - 1653 EP - 1662 VL - 13 IS - 3 SN - -2536-4618 M3 - doi: 10.21597/jist.1232557 UR - Y2 - 2023 ER -
EndNote	%0 Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi Quantum Transport Properties of InAs NWFET with Surface Traps %A Semran Ipek , İbrahim Genç %T Quantum Transport Properties of InAs NWFET with Surface Traps %D 2023 %J Journal of the Institute of Science and Technology %P -2536-4618 %V 13 %N 3 %R doi: 10.21597/jist.1232557 %U 10.21597/jist.1232557
ISNAD	Ipek, Semran , Genç, İbrahim . "Quantum Transport Properties of InAs NWFET with Surface Traps". Journal of the Institute of Science and Technology 13 / 3 (Eylül 2023): 1653-1662 .
AMA	Ipek S. , Genç İ. Quantum Transport Properties of InAs NWFET with Surface Traps. Iğdır Üniv. Fen Bil Enst. Der.. 2023; 13(3): 1653-1662.
Vancouver	Ipek S. , Genç İ. Quantum Transport Properties of InAs NWFET with Surface Traps. Journal of the Institute of Science and Technology. 2023; 13(3): 1653-1662.
IEEE	S. Ipek ve İ. Genç , "Quantum Transport Properties of InAs NWFET with Surface Traps", , c. 13, sayı. 3, ss. 1653-1662, Eyl. 2023, doi:10.21597/jist.1232557