Designing and fabricating complementary metal-oxide semiconductor (CMOS) based logic devices at nanoscale faces serious issues like oxide thickness, thermal reliability, and energy dissipation. Hence the industries are in search of new technologies which could substitute the scaling down of CMOS circuits. Quantum-dot-cellular-automata (QCA) is an imminent technology considered at nano-level with the high speed of operation and lower power dissipation features. As the memory is used in most of the electronic equipment for data storage purpose, designing a RAM cell with a reduced number of QCA cells, and lower energy dissipation finds wide applications in the electronics industry. This paper first proposes a five input majority gate which may be utilized efficiently for designing single layer QCA circuits. Then by using the invented gate, a coplanar RAM cell structure with Set and Reset capability is devised. The structural and energy dissipation analysis of presented structures are estimated using QCADesigner and QCAPro tools. The results prove that the disclosed RAM cell architecture achieves 12.5% lower area, 18.26% lower total energy dissipation, and 16.6% lower input to output delay than the best-reported design.