Selim ACAR, Mehmet KASAP, Eyüp GÜLER, Raşit AHISKA

Thermoelectric characterization of N-type (Bi2Te3)Se3 semiconductors in a temperature range 11-373 K

İki adet n-tipi (Bi2Te3)Se3 yarıiletkeni Bi2Te3 ve Bi2Se3 bileşimlerinden, bölge eritme ve presleme yöntemi ile büyütüldü. Bu yarıiletken numunelerin termoelektrik özellikleri; elektriksel iletkenlik ve Seebeck kat sayısı 11-373 K sıcaklık aralığında Harman tekniği kullanılarak ölçüldü. Oda sıcaklığında, Z parametresi bölge eritme yöntemi ile büyütülen numune için 4.1x1O^{-3}$ K"1 presleme yöntemi ile büyütülen yarıiletken numune için 2,4x10"3 K"1 olarak hesaplandı.

N-tipi (Bi2Te3) Se3 yarıiletken kristallerin 11-373 K sıcaklık aralığında termoelektrik karakterizasyonu

The two n-type (Bi2Te3)Se3 semiconductor samples were grown from Bi2Te3 and Bi2Se3 components using traveling heater and pulverized methods. Thermoelectric properties such as electrical conductivity and Seebeck coefficient have been measured in a temperature range 11-373 K using Harman technique. At the room temperature, the Z parameter has been calculated as 4.1xlO~3 K"1 and 2.4xlO~3 K"1 for the samples grown by the traveling heater methods, respectively.

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