Selim ACAR, Mehmet KASAP, Bora ALKAN

Electron mobility in relaxed $In_{0.51}Ga_{0.49}As$ and $In_{0.60}Ga_{0.40}As$ semiconductors and the effect of dislocation scattering

$In_{0.51}Ga_{0.49}As$ ve $In_{0.60}Ga_{0.40}As$ yarıiletkenlerinde Hail mobilitesinin sıcaklığa (T) karşı davranışını açıklamak için Kubo formülüne dayanan detaylı hesaplamalar yapıldı. Baskın saçılma mekanizması olarak dislokasyon saçılma mekanizması ele alındı. Teori ve deney arasında iyi bir uyum elde edildi.

$In_{0.51}Ga_{0.49}As$ ve $In_{0.60}Ga_{0.40}As$ gevşek tabakalı yarıiletkenlerde elektron mobilitesi ve dislokasyon saçılmasının etkisi

To explain the behavior of Hall mobility versus temperature T behavior in $In_{0.51}Ga_{0.49}As$ and $In_{0.60}Ga_{0.40}As$ detailed calculations have been carried out based on Kubo formula by taking the dislocation scattering as the dominant scattering mechanism. A good agreement has been obtained between the theory and the experiment.

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