Metal-Oksit-Yarıiletken (MOS) Kapasitörün Dielektrik Parametrelerinin Frekans ve Sıcaklık Bağımlılığı

Bu çalışmada, Silisyum Nitrür (Si3N4) arayüzey oksit tabakalı metal-oksit-yarıiletken (MOS) kapasitörün dielektrik parametreleri araştırılmıştır. Admitans ölçümleri (kapasitans ve iletkenlik), 300-400 K sıcaklık aralığında üç farklı frekans için (100, 500 ve 1000 kHz) gerçekleştirildi. MOS kapasitörün dielektrik parametreleri bu ölçümler kullanılarak hesaplandı. Dielektrik sabiti (?') ve dielektrik kayıp (?'') artan sıcaklıkla artarken artan frekansla azalmaktadır. Elde edilen ac iletkenlik(?ac) değerleri artan sıcaklık ve frekans ile artmaktadır. Ayrıca, elektriksel iletkenliğin Arrhenius eğrileri (ln?ac-1000/T), 300-320 K ve 340-400 K sıcaklık aralığında farklı eğimli iki lineer bölge gösterdi. Ayrıca, aktivasyon enerjileri (Ea), iki lineer bölgenin eğiminden hesaplandı.

Frequency and Temperature Dependence of Dielectric Parameters of Metal-Oxide-Semiconductor (MOS) Capacitor

In this study, the dielectric parameters of metal-oxide-semiconductor (MOS) capacitor with silicon nitride (Si3N4) interfacial oxide layer have been investigated. The admittance measurements (capacitance and conductance) were performed in the temperature range of 300-400 K for three different frequencies (100, 500 and 1000 kHz). The dielectric parameters of the MOS capacitor were calculated using these measurements. The dielectric constant (?') and loss (?'') increase with increasing temperature, while they decrease with increasing frequency. Also, ac conductivity (?ac) increases with increasing temperature and frequency. Arrhenius plots (ln?ac-1000/T) of ac conductivity show two linear regions with different slopes in the temperature range of 300-320 K and 340-400 K, respectively. Also, the activation energies (Ea) were calculated from slope of two linear regions.

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