Metal-Gözenekli Silisyum Direkt Hidrojen Pili Üretim Parametrelerinin Geliştirilmesi

Gözenekli silisyum (GS) üretim yöntemi olan, elektrokimyasal aşındırma (anodizasyon)koşullarının, Metal-Gözenekli Silisyum Direkt Hidrojen Pili (Metal-GS-DHP) elektrikselparametrelerine etkisi oldukça yüksektir. Bu çalışmada üretilen, n tipi, (111) yönelimli, tekkristal silisyumdan GS’nin 4 temel anodizasyon koşulu vardır (zaman, akım yoğunluğu, HForanı ve Işık aydınlatma). Anodizasyon zamanı 5-100 dakika, akım yoğunluğu 5-75 mA/cm2,HF:deiyonize H2O oranı 1:1- 1:11 ve ışık aydınlatma şiddeti 1000-7000 lüx aralıklarındauygulanmıştır .En iyi anodizasyon zamanı 40 dakika ve buna karşılık gelen Metal-GS-DHPelektriksel pil parametreleri, Voc= 590 mV Isc=30 µA’dir. En iyi akım yoğunluğu 20 mA/cm2ve buna karşılık gelen Metal-GS-DHP elektriksel pil parametreleri, Voc= 700 mV, Isc=15µA’dir. En iyi HF:H2O oranı 1:3 ve buna karşılık gelen Metal-GS-DHP elektriksel pilparametreleri, Voc= 420 mV, Isc=10 µA’dir. En iyi ışık aydınlatma şiddeti 4000 lüx ve bunakarşılık gelen Metal-GS-DHP elektriksel pil parametreleri, Voc= 540 mV Isc=18 µA’dir. Deneysonuçlarından anlaşılacağı üzere Metal-GS-DHP elektriksel pil parametreleri anodizasyonkoşullarına direkt bağlıdır.

Development of Metal-Porous Silicon Direct Hydrogen Fuel-Cell Production Parameters

Effect of the electrochemical etching (anodization) that is one of the manufacturing process of porous silicon (PS) on the electrical parameters of metal-porous silicon direct hydrogen cell (Metal-PS-DHC) is considerably high. There is 4 basic anodization parameters of n-type, (111) oriented, single crystal PS fabricated in this study (time, current density, HF ratio and light). 5- 100 Min. of anodization time, 5-75 mA/cm2 of current density, 1:1- 1:11 of HF:deionized H2O ratio and 1000-7000 lux light intensity is applied. The best anodization time is 40 minutes and corresponding Metal-PS-DHC electrical cell parameters are Voc= 590 mV and Isc=30 µA. The best HF: H2O ratio is 1:3 and the corresponding Metal-GS-DHP electrical cell parameters are Voc= 540 mV and Isc=18 µA. The best light intensity is 4000 lux and the corresponding MetalGS-DHP electrical cell parameters are Voc= 540 mV and Isc=18 µA. As the experimental results show, Metal-GS-DHP electrical cell parameters are directly related to the anodization conditions.

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  • A. Uhlir, Electrolytic Shaping of Germanium and Silicon. Bell System Tech. J. 35: (1956) 33-347.
  • L.T. Canham, Quantum Wire Array Fabrication by Electrochemical and Chemical Dissolution of Wafers. Appl. Phys. Lett. 57:10 (1990) 1046-1048.
  • R.L. Smith, S.D. Collins, Porous Silicon Formaton Mechanisms. Journal Appl. Phys. 71:R (1992) 1- 21.
  • A. Faucaran, F. Paskal-Delnnoy, A. Giani, A. Sackda, P. Combette, A. Boyer, Porous Silicon Layers Used for Gas Sensor Applications. Thin Solid Films. 297: (1997) 317-320.
  • L.A. Balagurov, S.C. Bayliss, A.F. Orlov, E.A. Petrova, B. Unal, D.G. Yarkin, Electrical Properties of Metal/Porous Silicon/p-Si Structures Whit Thin Porous Silicon Layer., Journal of Appl. Phys. 90:8 (2001) 4184-4190.
  • D. G. Yarkin, (2003), Impedance of Humidity Sensitive Metal/Porous Silicon/n-Si Structures. Sensors and Actuators B. 107: (2003)1-6.
  • T.D. Dzhafarov, C. Oruc, ve S. Aydin, Humidity-Voltaic Characteristics of Au Porous Silicon Interfaces. J. Phys. D: Appl. Phys. 37, 3: (2004) 404-408.
  • D. B. Dimitrov, Current-Voltage Characteristics of Porous-Silicon Layers. Physical Review B. 51,3: (1995) 1562-1566.
  • P.M.Z. Hasan, V.K. Sajith, M. Shahnawaze Ansari, J. Iqbal, A. Alshahrie, Influence of HF Concantration of Current Density of Characteristic Morphological Features of Mezoporous Silicon. Micropororus And Mezoporous Materials. 249: (2017) 176-190.
  • M. Das, P. Nath, D. Sarkar, Influence of Etching Current Density on Microstructural Optical and Electrical Properties of Porous Silicon (PS):n-Si Heterostructure. Superlattices and Microstuctures. 90: (2016) 77-86.
  • M. Ramesh, H.S. Nagaraja, Effect of Current Density on Morphological Structural and Optical Properties of Porous Silicon. Materials Today Chemistry. 3: (2017) 10-14.
  • F. S. Gill, V. Panvar, H. Gupta, G. S. Kalra, S. Chawla, R. Kumar, R. M. Mehra, Study of Growth Dot and Column inPorous Silicon Samples of Various Thicnesses Prepared at a Costant Current Density. Physica E. 73: (2015) 110-115.
  • M. Ramesh, H.S. Nagaraja, The Effect of Ethcing Time on Structural Properties of Porous Siliconat The Room Temperature. Material Today: Proseeding. 3: (2016) 2085-2090.
  • A.S. Khaldun, O. Khalid, Z. Hassan, The Effect of Ethcing Time of Porous Silicon Solar Cell Performance. Superlattices and Microstuctures. 50: (2011) 647-658.
  • T. D. Dzhafarov, B. Can Omur, C. Oruc. Z.A. Allahverdiev, Hydrojen Sensing Characteristics of CuPS-Si Structures. J. Phys. D: Appl. Phys. 35: (2002) 3122-3126.
  • C. Oruc, S. Guler, Effect of Au, Ag and Cu Thin Films’ Thickness on The Electrical Parameters of Metal-Porous Silicon Direct Hydrogen Fuel Cell. International Journal of Hydrogen Energy. 39: (2014) 20183-20189
Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım ve Teknoloji-Cover
  • Yayın Aralığı: 4
  • Başlangıç: 2013
  • Yayıncı: Gazi Üniversitesi , Fen Bilimleri Enstitüsü