FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS

In this work, Er doped ZnO films and silicon substrates were used as n-type and p-type semiconductors, respectively. In order to obtained p-Si/n-ZnO:Er heterojunction structures, top (aluminum; Al) and bottom (gold; Au) metal contacts were deposited using a evaporator and sputter, respectively. The electrical characterization of these heterojunctions were investigated by current–voltage (I–V) characteristics at room temperature and in dark. It was observed that Au/p-Si/n-ZnO:Er/Al heterojunction structures have rectifying properties. The diode parameters such as barrier height, series resistance and ideality factor were investigated by using I–V measurement data. These parameters were determined by using different methods.

Keywords:

ZnO Heterojunctions, Diode parameters,

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Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering-Cover

ISSN: 2667-4211
Yayın Aralığı: Yılda 4 Sayı
Başlangıç: 2000
Yayıncı: Eskişehir Teknik Üniversitesi

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