Hasan Hüseyin ERKAYA

105109

Si/Sige HETEROJUNCTION BIPOLAR TRANSISTORS (A REVIEW)

The research on Sı/SiGe heterojunction bipolar transisfors has led the
Anahtar Kelimeler:

SiGe alloys, heterojuncîion bıpolar transislors.

Si/Sige HETEROJUNCTION BIPOLAR TRANSISTORS (A REVIEW)

The research on Sı/SiGe heterojunction bipolar transisfors has led theultra-high-speed transıstors tha! are compatible wilh the state-of-the-art siliconinlegraled technology. The SiGe base regions ofthese transistors are grımn selectivetyon silicon substrates. Self-aligned slructures are used to reduce the external baseresisıance aııd base colleclor parasitic capacitance. The germanium profile in Ihe baseis graded to obtain a drift ejfect to reduce the base-transil tiıne. Si/SiGe integratedcircuils for applications in optical-flber link systems and Si/SiGe microwave poverIransistors have been produced wilh remarkable speeds. The SiGe semıconduaormaterial system, HBT slructures and fabricalion, and device performance issues arereviewed in thispaper.
Keywords:

SiGe alloys, heterojuncîion bıpolar transislors.,

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Eskişehir Osmangazi Üniversitesi Mühendislik ve Mimarlık Fakültesi Dergisi-Cover
  • Yayın Aralığı: Yılda 3 Sayı
  • Başlangıç: 1986
  • Yayıncı: Eskişehir Osmangazi Üniversitesi
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