Fırat KACAR, Ayten KUNTMAN, Hakan KUNTMAN

399443

A SIMPLE APPROACH FOR MODELING THE INFLUENCE OF HOT-CARRIERS ON THRESHOLD VOLTAGE OF MOS TRANSISTORS

A SIMPLE APPROACH FOR MODELING THE INFLUENCE OF HOT-CARRIERS ON THRESHOLD VOLTAGE OF MOS TRANSISTORS

Hot-carrier-induced degradation of MOSFET parameters over time is an important reliability
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  • ISSN: 2619-9831
  • Yayın Aralığı: 3
  • Başlangıç: 2001
  • Yayıncı: İstanbul Üniversitesi-Cerrahpaşa
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