A SIMPLE APPROACH FOR MODELING THE INFLUENCE OF HOT-CARRIERS ON THRESHOLD VOLTAGE OF MOS TRANSISTORS
A SIMPLE APPROACH FOR MODELING THE INFLUENCE OF HOT-CARRIERS ON THRESHOLD VOLTAGE OF MOS TRANSISTORS
Hot-carrier-induced degradation of MOSFET parameters over time is an important reliability
Keywords:
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- ISSN: 2619-9831
- Başlangıç: 2001
- Yayıncı: İstanbul Üniversitesi-Cerrahpaşa
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