Time Domain Dynamic Analysis of 1550nm Monolithic Two Sections Mode Locked MQW Laser

Time Domain Dynamic Analysis of 1550nm Monolithic Two Sections Mode Locked MQW Laser

In this study, time domain dynamic model of a mode locked two sections DBR laser was obtained. Sort duration and high power optical pulse generation from a semiconductor laser was examined by using obtained model. For this aim, while one of the laser sections was thought as reverse biased and so acted as a saturable absorber, other section thought as forward biased with a DC current and so acted as a gain section. A semiconductor laser biased this way can produce mode locked pulses by suitable adjusting of reverse bias and forward bias values and this method known as passive mode locking. 

___

  • Adams, M. J., Steventon, A. G., Delvin, W. J., Henning, I. D., 1987. Semiconductor Lasers for Long-Wavelength Optical-Fibre Communications Systems. Short Run Press Ltd., 123 p, England.
  • Akbar, J., Strain, M.J., Hou, L., Haji, M., Marsh, J.H., Bryce, A.C. and Kelly, A.E., 2011. High peak power (550mW) 40GHz mode-locked DBR lasers with integrated optical amplifiers. IEEE Photonics 2011 Conference (IPC11), Arlington.
  • Avrutin, E.A. and Portnoi, E.L., 2008. Suppression of Q-switching instabilities in broadened-waveguide monolithic mode-locked laser diodes. Optical and Quantum Electronics, 40 (9), 655-664.
  • Avrutin, E.A., Marsh, J.H. and Portnoi, E.L., 2000. Monolithic and multi-gigahertz mode-locked semiconductor lasers: Constructions, experiments, models and applications. IEE Proceedinds-Optoelectronics, 147 (4), 251-278.
  • Çakmak, B., 2006. Modelling of experimentally measured Q-switched pulsations in InGaAs/GaAs diode lasers. Optics Communications, 266 (2), 614-619.
  • Fells, A.J., 1995. Negative Chirp Electroabsorption Modulators for Standard Fibre Transmission Systems. PhD Thesis, University of Bath, United Kingdom.
  • Gray, G.R., 1994. Applications of Semiconductor Lasers. Semiconductor Lasers Past Present and Future, Goving P. Agrawal. American Institute of Physics, New York, 284-320.
  • Hasler, K.H., Klehr, A., Wenzel, H. and Erbert, G., 2005.Simulation of high-power pulse generation due to modelocking in long multisection lasers. IEE Proceedings-Optoelectronics,152 (2), 77-85.
  • Hou, L., Haji, M. and Marsh, J.H., 2013. Monolithic mode-locked laser with an integrated optical amplifier for low-noise and high-power operation. IEEE Journal of Selected Topics in Quantum Electronics, 19 (4), 1100808.
  • Jones, D.J., Zhang, L.M., Carroll, J.E. and Marcenac, D.D., 1995. Dynamics of monolithic passivelly mode-locked semiconductor lasers. IEEE Journal of Quantum Electronics, 31 (6), 1051-1058.
  • Karin, J.R., Helkey, R.J., Derickson, D.J., Nagarajan, R., Allin, D.S., Bowers, J.E. and Thornton, R.L., 1994. Ultrafast dynamics in fieldenhanced saturable absorbers. Applied Physics Letters, 64 (6), 676-678.
  • Larson, D., Yvind, K. and Hvam J.M., 2007. Long all-active monolithic mode-locked lasers with surface-etched Bragg gratings. IEEE Photonics Technology, 19 (21), 1723-1725.
  • Maldonado-Basilio, R.M., Latkowski, S., Surre, F. and Landais, P., 2010. Linewidth analysis of 40-GHz passively mode-locked multi-mode semiconductor lasers. Optics Communications , 283 (2), 299-303.
  • Nakamura, T., Okuda, T., Kobayashi, R., Muroya, Y., Tsuruoka, K., Ohsawa, Y., Tsukuda, T., Ishikawa, S., 2005. 1.3µm AlGaInAs strain compensated MQW-buried-heterostructure lasers for uncooled 10 Gb/s operation. IEEE Selected Topics in Quantum Electronics, 11 (1), 141-148.
  • Rablau, C., 2010. Applications of Photonics. Photonics and Fiber Optics Lab, Kettering University, http://www.kettering.edu/employers/research/labs/photonics/applications.jsp (15.11.2011).
  • Schwertfeger, S., Klehr, A., Liero, A., Erbert, G. and Tränkle, G., 2007. High-power picosecond pulse generation due to mode-locking with a monolithic 10-mm-long four-section DBR laser at 920nm. IEEE Photonics Technology Letters, 19 (23), 1889-1891.
  • Vasil’ev, P.P., 1995. Ultrafast Diode Lasers Fundamentals and Applications. Artech House, 271 p, London.
  • Williams, K.A., Thompson, M.G. and White, I.H., 2004. Long-wavelength monolithic mode-locked diode lasers. New Journal of Physics, 6 (1), 1-30.
  • Yu J. and Bimberg, D., 1995. Suppression of self-pulsation for tens of gigahertz optical pulses from passively mode-locked semiconductor lasers. Applied Physics Letters, 67 (22), 3245-3247.
  • Zatni, A., Khatip, D., Bour, M., Bihan, J.L.B. and Elhaziti, M., 2004. Analysis of the spectral stability of the phase shift DFB laser (3PS-DFB). Annals of Telecommunications, 3 (9), 1031-1044.
  • Zhang, L.M., Yu, S.F., Nowell, M.C., Marcenac, D.D., Carroll, J.E. and Plumb, R.G.S., 1994. Dynamic analysis of radiation and side-mode suppression in a second-order DFB laser using time-domain large-signal traveling wave model. IEEE Journal of Quantum Electronics, 30 (6), 1389-1395.
  • -
  • Zhu, B., White, I.H., Penty, A., Wonfor, A., Lach, E. And Summers, H.D., 1997. Theoreticalanalysis of timing jitter in monolithic multisection mode-locked DBR laser diodes. IEEE Journal of Quantum Electronics, 33 (7), 1216-1220.