Electronic characteristics of asymmetric triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on Al and In concentration

Herein, the electronic characteristics of asymmetric triple Ga1-x Alx As/GaAs quantum wells(A model) and Ga1-x Inx As/GaAs quantum wells (B model) have been examined asdependent on Al and In concentration. The energy levels, the wave functions and the findingprobability of electron in quantum well (QW) of these systems under effective mass approachwere concluded by Schrödinger equation solution. According to our results, the maindifferences between models A and B are effective mass and energy gap. For A model,GaAlAs is the barrier and GaAs is the well. Whereas for B model, GaAs is the barrier andGaInAs is the well. Also, the energy levels and the potential height of B model areunceasingly higher than of B model. The concentration ratio has a great impact on theelectronic features of the asymmetric triple quantum well (ATQW). These features have aconvenient attention for the purpose of adjustable semiconductor devices.

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