Samad GHALANDARİ, Hossein BAHRAMİ, Hasti ABBASİ, Gholamreza KARİMİ

Designing and simulation SOI MOSFET transistorsto enhance DIBL parameterand improveself-thermal effects

ISSN: 2587-2680
Yayın Aralığı: Yılda 4 Sayı
Başlangıç: 2002
Yayıncı: SİVAS CUMHURİYET ÜNİVERSİTESİ > FEN FAKÜLTESİ

Abstract. In this study, a new structure for FD SOI MOSFET has been presented toimprove DIBL parameter and also to enhance self-heating effect. The main idea of this structure is to change the thickness of BOX layer in transistor in order to improve DIBL parameter and self-heating effect.

Keywords:

Self-Heating Effect, FD SOI MOSFET, DIBL,

PDF

___

Colinge,J.P.(2004) , “Silicon on Insulator Technology:Materials to VLSI” . Kluwer Academic Publishers,London.
Kumar,M.J., Orouji,A.A.(2005), “Two-dimensional analytical threshold voltage model of nanoscale fully depleted SOI MOSFET with electrically induced source/drain extensions”. IEEE Trans.Electron Devices, Vol.52,pp.1568-1575.
Chaudhry,A.,Kumar,M.J.(2004), “Controlling short-channel effects in deep submicron SOI MOSFETs for improved reliability:A review”.IEEE Trans. On Device and Mater.Reliability,Vol.4,pp.99-109.
M.Braccioli, G.Curatola, Y.Yang, E.Sangiorgi, C.iegna, “Simulation of self-heating effects in different SOI MOS architectures” solid-stste Electronics.pp.445-451,2009.
Chaudhry and M. Jagadesh Kumar, “Controlling Short-Channel Effects in Deep- Submicron SOI MOSFETs for Improved Reliability: A Review”, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 4, NO. 1, pp.99-109, MARCH 2004.
J.P. colinge, “Silicon On Insulator technology: materials to VLSI”, 3rd edition, Kluwer Academin Publishers, 2004. www.ITRS.com
[10] H.Ghanatian, M.Fathipour and H.Talebi, “Nanoscale Ultra Thin Body-Silicon-On- Insulator Field Effect Transistor with Step BOX:Self-heating and Short Channel Effects”, IEEE/ULIS,pp.325-328,Aachen,2009.
T. Tsuchiya, Y. sato and m. Tomizawa, “Three Mechanisms Determining Short-Channel Effects in fully-depleted SOI MOSFETs”, IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol.45, No.5, pp.1116-1121, may 1998.