Çift GaAlAs/GaAs ve GaInAs/GaAs kuantum kuyularının kuyu genişliğine bağlı olarak elektronik özellikleri

Bu çalışmada, çift Ga1-x Alx As/GaAs kuantum kuyularının (A yapısı) ve Ga1-x Inx As/GaAs /GaAs kuantum kuyularının (B yapısı) elektronik özellikleri kuyu genişliğine bağlı olarak incelenmiştir. Etkin kütle yaklaşımı kullanılarak, Schrödinger denkleminin çözümüyle enerji seviyeleri, dalga fonksiyonları ve bu sistemin olasılık yoğunlukları hesaplanmıştır. Elde edilen sonuçlara göre, A ve B yapısının temel farklılıkları yasak enerji aralığı ve etkili kütledir. A yapısı için engel GaAlAs ve kuyu GaAs’dır. B yapısı için ise engel GaAs ve kuyu GaInAs’dır. Ayrıca, A yapısının potansiyel yüksekliği ve enerji seviyeleri her zaman B yapısından düşüktür. Kuyu genişliği, çift kuantum kuyusunun (DQW) elektronik özellikleri üzerinde büyük bir etkiye sahiptir. Bu özellikler, ayarlanabilir yarı iletken cihazların tasarımı için pratik bir ilgiye sahiptir.

Electronic properties of double GaAlAs/GaAs and GaInAs/GaAs quantum wells as dependent on well width

Herein, the electronic properties of double Ga1-x Alx As/GaAs quantum wells (A model) and Ga1-x Inx As/GaAs quantum wells (B model) have been examined related to the well width. The wave functions, the subband energies and the probability densities of these systems under effective mass approach were determined by the solution of Schrödinger equation. According to the results obtained, the major diversities of A and B models are the effective mass and the energy gap. For A model, GaAlAs is the barrier and GaAs is the well. Whereas for B model, GaAs is the barrier and GaInAs is the well. Also, the potential depth and the energy levels of A model are continuously smaller than of B model. The well width has a great impact on the electronic features of the double quantum well (DQW). These features have a convenient attention for the purpose of adjustable semiconductor devices.

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