Abstract.In this study, the effects of electric fields, the concentrations of nitrogen and indium on infrared transitions between 1s, 2s ve 2p± donor impurity energy levels at the single GaInNAs/GaAs quantum well are investigated using the variational method in the framework of the effective mass approximation.Key Words: Single quantum well, band anti-crossing (BAC) model, Impurity binding energy, Dilute III-N-V semiconductors