Alev Püskürtme Piroliz Yöntemi KullanarakIGZO Nanopartiküllerinin Sentezi ve Karakterizasyonu

Yüksek elektron mobilitesi, düşük eşik gerilimi ve kaplama sonrası şeffaf özellik gösteren İndiyum Galyum Çinko Oksit (InGaZnO4, IGZO) malzemesi ekran teknolojilerinde artan bir ivmeyle kullanılmaktadır. Bu çalışmada, IGZO nanopartikülleri alev püskürtme piroliz yöntemi kullanılarak tek aşamada başarıyla sentezlendi. Üretilen nanopartiküllerin faz ve element analizleri, sırasıyla X-ışını kırınımı (XRD) ve X-ışını fotoelektron spektroskopisi (XPS) ölçümleriyle yapıldı. Isıl işlem öncesi XRD analizinde amorf yapı gözlemlenirken, 1200 oC de yapılan kalsinasyon sonucu rombohedral kristalin $InGaZnO_4$ yapısı tespit edildi. Elementel analiz sonucunda yapı içerisinde In, Ga, Zn ve O elementlerinin varlığı kanıtlandı. Yüzey morfolojisi ve partikül büyüklüğü taramalı elektron mikroskobu (SEM) kullanılarak tespit edilirken, nanopartiküllerin parçacık boyutlarının

Synthesis and Characterization of IGZO Nanoparticles Using Flame Spray Pyrolysis Method

The Indium Gallium Zinc Oxide (InGaZnO4, IGZO) material, which shows high electron mobility, low threshold voltage and transparent after coating, has been used with increasing acceleration in screen technologies. The flame spray pyrolysis technique was used to successfully synthesize IGZO nanoparticles in one step in this study. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) measurements were used to determine the phase and elemental composition of the nanoparticles, respectively. While the amorphous structure was observed in the XRD analysis prior to the heat treatment, the 4InGaZnO_4$ structure of the rhombohedral crystal was determined through calcination at 1200 oC. As a result of elemental analysis, the presence of In, Ga, Zn and O elements in the structure was proven. The scanning electron microscopy (SEM) was used to determine the surface morphology and particle size of nanoparticles, which were found to be less than 100 nm in size and hemispherical. The photoluminescence and optical decay time characterizations of nanoparticles were studied under UV excitation and IGZO nanoparticles exhibited emission around 510 nm and 570 nm at 380 nm excitation. Under these conditions of excitation and emission, the optical decay time was computed as bi-exponentials and 32.36 µs.

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  • [1] Zhang L., Zhang H., Bai Y., Ma J.W., Cao J., Jiang X.Y., Zhang Z.L. 2008. Enhanced performances of ZnO-TFT by improving surface properties of channel layer. Solid State Communications, 146 (9–10): 387–390.
  • [2] Kumaresan Y., Pak Y., Lim N., Lee R., Song H., Kim T.H., Choi B., Jung G.Y. 2016. Effect of channel thickness, annealing temperature and channel length on nanoscale $Ga_2O_3 -In_2O_3 -ZnO$ thin film transistor performance. Journal of Nanoscience and Nanotechnology, 16 (6): 6364– 6367.
  • [3] Sun J., Lu A., Wang L., Hu Y., Wan Q. 2009. High-mobility transparent thin-film transistors with an Sb-doped nanocrystal channel fabricated at room temperature. Nanotechnology, 20 (33): 335204.
  • [4] Meng Y., Liu G., Liu A., Song H., Hou Y., Shin B., Shan F. 2015. Low-temperature fabrication of high performance indium oxide thin film transistors. RSC Advances, 5 (47): 37807–37813.
  • [5] Fujii M., Ishikawa Y., Ishihara R., Cingel J. van der, Mofrad M.R.T., Horita M., Uraoka Y. 2013. Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing. Applied Physics Letters, 102 (12): 122107.
  • [6] Dai S., Wang T., Li R., Wang Q., Ma Y., Tian L., Su J., Wang Y., Zhou D., Zhang X., Wang Y. 2018. Preparation and electrical properties of N-doped ZnSnO thin film transistors. Journal of Alloys and Compounds, 745 : 256–261.
  • [7] Chuang C.-S., Fung T.-C., Mullins B.G., Nomura K., Kamiya T., Shieh H.-P.D., Hosono H., Kanicki J. 2008. P-13: Photosensitivity of amorphous IGZO TFTs for active-matrix flat-panel displays. SID Symposium Digest of Technical Papers, 39 (1): 1215–1218.
  • [8] Hsieh H., Lu H., Ting H., Chuang C., Chen C., Lin Y. 2011. Development of IGZO TFTs and their applications to next‐generation flat‐panel displays. Journal of Information Display, 11 (4): 160–164.
  • [9] Jung C., Choi M.S., Choi K.H., Yoon D.H. 2010. Controllable crystallinity of synthesized InGa-Zn-O nano-powder by using a pulp precursor for printing processes. Physica Status Solidi (A), 207 (7): 1680–1683.
  • [10] Wu M.C., Hsiao K.C., Lu H.C. 2015. Synthesis of InGaZnO4 nanoparticles using low temperature multistep co-precipitation method. Materials Chemistry and Physics, 162 : 386–391.
  • [11] Fukuda N., Watanabe Y., Uemura S., Yoshida Y., Nakamura T., Ushijima H. 2014. In-Ga-Zn oxide nanoparticles acting as an oxide semiconductor material synthesized via a coprecipitationbased method. Journal of Materials Chemistry C, 2 (13): 2448–2454.
  • [12] Barquinha P., Pereira L., Gonçalves G., Martins R., Fortunato E. 2009. Toward highperformance amorphous GIZO TFTs. Journal of The Electrochemical Society, 156 (3): H161.
  • [13] Nomura K., Takagi A., Kamiya T., Ohta H., Hirano M., Hosono H. 2006. Amorphous oxide semiconductors for high-performance flexible thin-Film transistors. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45 (5 B): 4303–4308.
  • [14] Jeong J.K., Jeong J.H., Yang H.W., Park J.S., Mo Y.G., Kim H.D. 2007. High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel. Applied Physics Letters, 91 (11): 113505.
  • [15] Park J.S., Jeong J.K., Mo Y.G., Kim H.D., Kim S. Il. 2007. Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by ar plasma treatment. Applied Physics Letters, 90 (26): 262106.
  • [16] Yabuta H., Sano M., Abe K., Aiba T., Den T., Kumomi H., Nomura K., Kamiya T., Hosono H. 2006. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature Rf-Magnetron sputtering. Applied Physics Letters, 89 (11): 112123.
  • [17] Iwasaki T., Itagaki N., Den T., Kumomi H., Nomura K., Kamiya T., Hosono H. 2007. Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: an application to amorphous oxide semiconductors in In-Ga-Zn-O system. Applied Physics Letters, 90 (24): 242114.
  • [18] Nomura K., Ohta H., Takagi A., Kamiya T., Hirano M., Hosono H. 2004. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature, 432 (7016): 488–492.
  • [19] Cerdà J., Arbiol J., Diaz R., Dezanneau G., Morante J.R. 2002. Synthesis of perovskite-type BaSnO3 particles obtained by a new simple wet chemical route based on a sol-gel process. Materials Letters, 56 (3): 131–136.
  • [20] Habeeba K., Manjulavalli T.E., Ezhilarasi Gnanakumari D. V., Karthikadevi V. 2019. Highly crystalline perovskite BaSnO3 nanopowder synthesised using hydrothermal technique. Materials Research Express, 6 (9): 094004.
  • [21] Deepa A.S., Vidya S., Manu P.C., Solomon S., John A., Thomas J.K. 2011. Structural and optical characterization of BaSnO3 nanopowder synthesized through a novel combustion technique. Journal of Alloys and Compounds, 509 (5): 1830–1835.
  • [22] Gültekin S., Yıldırım S., Yılmaz O., Keskin İ.Ç., Katı M.İ., Çelik E. 2019. Structural and optical properties of $SrAl_2O_4: $$Eu^{2+}/Dy^{3+}$ phosphors synthesized by flame spray pyrolysis technique. Journal of Luminescence, 206 : 59–69.
  • [23] Yildirim S., Yurddaskal M., Dikici T., Aritman I., Ertekin K., Celik E. 2016. Structural and luminescence properties of undoped, $Nd^{3+} and Er^{3+} doped TiO_2$ nanoparticles synthesized by flame spray pyrolysis method. Ceramics International, 42 (9): 10579–10586.
  • [24] Yildirim S., Karsu Asal, E.C., Ertekin K., Celik E. 2017. Luminescent properties of scintillator nanophosphors produced by flame spray pyrolysis. Journal of Luminescence, 187 : 304–312.
  • [25] Liu J.A., Li C.H., Shan J.J., Wu J.M., Gui R.F., Shi Y.S. 2018. Preparation of high-density InGaZnO4 target by the assistance of cold sintering. Materials Science in Semiconductor Processing, 84 : 17–23.
  • [26] Chen J., Wang L., Su X., Kong L., Liu G., Zhang X. 2010. InGaZnO semiconductor thin film fabricated using pulsed laser deposition. Optics Express, 18 (2): 1398.
  • [27] Krishnan R., Thirumalai J., Chandramohan R. 2013. Room temperature photo-induced, $Eu^{3+}-$ doped IGZO transparent thin films fabricated using sol–gel method. Journal of Nanostructure in Chemistry, 3 (1): 1–4.
  • [28] Wu G.M., Liu C.Y., Sahoo A.K. 2015. RF sputtering deposited A-IGZO films for LCD alignment layer application. In: Applied Surface Science. Elsevier B.V., pp 48–54.
  • [29] Xu W., Hu L., Zhao C., Zhang L., Zhu D., Cao P., Liu W., Han S., Liu X., Jia F., Zeng Y., Lu Y. 2018. Low temperature solution-processed IGZO thin-film transistors. Applied Surface Science, 455: 554–560.
Bitlis Eren Üniversitesi Fen Bilimleri Dergisi-Cover
  • Yayın Aralığı: Yılda 4 Sayı
  • Başlangıç: 2012
  • Yayıncı: Bitlis Eren Üniversitesi Rektörlüğü
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