The binding energy of a hydrogenic impurity in triple GaAs/$Al_x Ga_{1-x}As$ quantum well-wires under applied electric field

Tel sisteminin ekseni, boyunca dik uygulanan bir dış elektrik alan etkisine maruz kalan üçlü GaAs/$Al_x Ga_{1-x}As$ kuantum kuyu tel sisteminde, hidrojenik yabancı atomun taban durum bağlanma enerjisi çalışıldı. Elektrik alan etkisinde, valans subband enerjileri ve dalga fonksiyonları dördüncü derece Runge-Kutta metodu kullanılarak hesaplandı. Üçlü GaAs/$Al_x Ga_{1-x}As$ kuantum kuyu telinde hidrojenik yabancı atomun bağlanma enerjisi için varyasyonel metot kullanılmıştır. Bağlanma enerjisi hesapları tel kalınlığının, elektrik alanın ve yabancı atomun konumunun fonksiyonu olarak incelenmiştir. Üçlü GaAs/$Al_x Ga_{1-x}As$ kuantum kuyu telinde hidrojenik yabancı atomun bağlanma enerjisi için nümerik sonuçlar keskin bir artma veya azalma gösterir ki bu uygun şartlar mevcut olduğunda devre elemanları uygulamalarında önemli olabilir.

Elektrik alan altında üçlü GaAs/$Al_x Ga_{1-x}As$ kuantum kuyu-tellerinde bir hidrojenik yabancı atomun bağlanma enerjisi

The ground state binding energy of hydrogenic impurity in a triple GaAs/$Al_x Ga_{1-x}As$ quantum well-wire (QWW) system subjected to an external electric field applied perpendicular to the along axis of the wire system is studied. The valance subband energies and wave functions in the presence of an electric field are calculated using the fourth-order Runge-Kutta method. The variational method for the binding energy of hydrogenic impurity in a triple GaAs/$Al_x Ga_{1-x}As$ QWW has been used. Binding energy calculations were performed as function of the wire thickness, the electric field and the impurity position. Numerical results for binding energy of hydrogenic impurity in a triple GaAs/$Al_x Ga_{1-x}As$ QWW show a sharp decrease or increase, which may be important in device applications, under suitable conditions.

PDF

___

1-AGHASYAN MM, KIRAKOSYAN AA. "Binding energy of impurity in a size-quantized coated semiconductor wire:role of the dielectric-constant mismatch", Physica E, 8: 281-289,2000.
2-AKTAS S, OKAN SE, ERDOĞAN I, AKBAŞ H, TOMAK M. "Donor binding energies in GaAs quantum wells considering the band nonparabolicity effects and the wavefunction elongation" Superlattices and Microstructures, 28: 165-169,2000.
3-AKTAS S, OKAN SE, AKBAŞ H. "Electric field effect on the binding energy of a hydrogenic impurity in coaxial GaAs/AlxGal-xAs quantum well-wires" Superlattices and Microstructures, 30: 129-134, 2001.
4-Bloss WL, "Electric field dependence of quantum-well eigen states", J. Appl. Phys. 65: 4789-4794,1989.
5-CHAO HT, TRAN THOAI DB. "Effect of the electric field on a hydrogenic impurity in a quantum-well wire", Physica B, 205:273-278, 1995.
6-CHUU DS, HSIAO C M, MEI W N. "Hydrogenic impurity states in quantum dots and quantum wires", Physical Review B, 46: 3898-3905, 1992.
7-KIM TW, LEE D. "Enhancement of the intersubband Stark effect in strained InxGal-xAs/InyAU-yAs asymmetric coupled double quantum wells", Applied Surface Science, 153: 96-101, 2000.
8-KOREPOV SV, LIBERMAN MA. "Transport properties of double quantum wires in magnetic field", Physica B, 259-261: 1028-1029,1999.
9-LEE B, KIM KY. "Effect of parallel-perpendicular kinetic energy coupling under effective mass approximation at heterostructure boundaries in a quantum wire", Journal of Applied Physics, 84: 5593-5596, 1998.
10-LEE J., SPECTOR HN, "Impurity-limited mobility of semiconducting thin wire", J. Appl. Phys. 54: 3921-3925, 1983.
11-MONTES A, DUQUE C. A, PORRAS-MONTENEGRO N., "Density of shallow-donor impurity states in rectangular cross section GaAs quantum-well wires under applied electric field", J. Physc: Condens. Matter, 11: 5351-5358, 1998.
12-OKAN SE, AKBAŞ H, AKTAŞ S, TOMAK M. "Binding energies of helium-like impurities in parabolic quantum wells under an applied electric field", Superlattices and Microstructures, 28: 171-176, 2000.
13-Sakaki H., "Scattering suppression and high-mobility effect of size-quantized electrons in ultrafme semiconductor wire structures", Jpn. J. appl. Phys., 19: L735-L738, 1980.
14-TRAN THOAI DB D. B. "Hydrogenic impurity in quantum-well wires effects of the image charges", Solid State Communications, 81: 945-947, 1992.
15-ULAŞ M, AKBAŞ H, TOMAK M. "Shallow donors in a quantum well wire: Electric field and geometrical effects", Phys. Stat. Sol., 200: 67-73, 1997.
16-VASILOPOULOS P, RAICHEV O. "Resistance and transresistance of two Coulomb-and tunnel-coupled quantum wires", Physisca E, 6: 684-688, 2000.