The Temperature Dependence of the Electronic Structure of Si d-doped GaAs

The Temperature Dependence of the Electronic Structure of Si d-doped GaAs

Turkish Journal of Physics

2002-Cilt: 26 - Sayı: 6

465-472

d-doped GaAs, electronic structure, temperature-dependence.

d-doped GaAs, electronic structure, temperature-dependence.

8211

Benzer Makaleler

GaAs / GaInAs Kuantum Kuyularının Elektronik Enerji Spektrumu

International Journal of Advances in Engineering and Pure Sciences

Pınar BAŞER, Mehmet Ali TOPRAK, Sezai ELAGÖZ

Ag/n-GaAs(100) Schottky Kontakların l-V ve C-V Karakteristikleri

Selçuk Üniversitesi Fen Fakültesi Fen Dergisi

Ö. Faruk YÜKSEL, Tuğba DÜNDAR DURAK

Görünür-Işık ile Çalışan Fotokatalizör Hematitin Çinko ve Bakır ile Katkılanmasıyla Geliştirilmesinin Karşılaştırmalı İncelenmesi

Düzce Üniversitesi Bilim ve Teknoloji Dergisi

An experimental examination of the effect of temperature distributions in different welding sorting of the part transmitting thrust in front loader of tractors by means of MAG method on displacements

International Journal of Automotive Science and Technology

Haluk GÜNEŞ, Salih ÖZDEL

Determination of barrier height temperature coefficient by Norde's method in ideal Co/n-GaAs Schottky contacts

Turkish Journal of Physics

Abdulmecit TURUT

XRD, XPS, and optical characterizations of Al-doped ZnO film grown on GaAs substrate

Turkish Journal of Physics

EBRU ŞENADIM TÜZEMEN, Hülya ŞAHİN, KAMURAN KARA, Sezai ELAGÖZ, RAMAZAN ESEN

Preparation and Characterization of Conducting Polybutadiene/ Polythiophene Composites

Turkish Journal of Chemistry

Senem KIRALP, Zuhal KÜÇÜKYAVUZ

Cultural Heritage of Kazakhstan in Written Sources of the XIX Century: “e-catalog”

A. Âsaui atyndaġy Halyk̦aralyk̦ k̦azak̦-tùrìk universitetìnìn̦ habaršysy

A.s. KASYMBEKOV