314-322
Quantum dots-in nanowires, nitrides, GaN, InGaN, AlGaN, quantum confinement, biexciton binding energy
Quantum dots-in nanowires, nitrides, GaN, InGaN, AlGaN, quantum confinement, biexciton binding energy
Saga of efficiency degradation at high injection in InGaN light emitting diodes
Vitaliy AVRUTIN, Shopan A. HAFIZ1, Fan ZHANG, Umit ÖZGÜR, Enrico BELLOTTI, Francesco BERTAZZI, Michele GOANO, Arvydas MATULIONIS, T. Adam ROBERTS, O. Henry EVERITT, Hadis MORKOC
The influence of confinements on the photon flux spectra in amorphous silicon quantum dots
Moafak Cadim ABDULRIDA, Nidhal Moosa ABDUL-AMEER, Shatha Mohammad ABDUL-HAKEEM
A calorimetric study of the interaction of silver ions with jack bean urease
Ali Akbar SABOURY, Elahe POORAKBAR, Gholamreza Rezaei BEHBEHANI
Al 0.3 Ga 0.7 N/GaN HEMT Yapısı için QMSA Metodu Uygulanması
Karadeniz Fen Bilimleri Dergisi
Ahmet BİLGİLİ, Ömer AKPINAR, Naki KAYA, Mustafa ÖZTÜRK
PRESERVING QUANTUM CORRELATIONS VIA DECOHERENCE CHANNELS WITH MEMORY
Eskişehir Teknik Üniversitesi Bilim ve Teknoloji Dergisi B - Teorik Bilimler
A. Kürşat Bilgili, Ömer Akpınar, Gürkan Kurtuluş, M. Kemal Öztürk, Süleyman ÖZÇELİK, Ekmel Özbay
Erzincan Üniversitesi Fen Bilimleri Enstitüsü Dergisi
XRD vs Raman for InGaN/GaN Structures
A.Kürşat BİLGİLİ, Ömer AKPINAR, M. Kemal ÖZTÜRK, Süleyman ÖZÇELİK, Ekmel ÖZBAY