Osman CEYLAN, Hasan Bülent YAĞCI, Selçuk PAKER

Tunable Class-F high power amplifier at X-Band using GaN HEMT

Turkish Journal of Electrical Engineering and Computer Science

2018-Cilt: 26 - Sayı: 5

2327-2334

Class-F, gallium nitride, high-electron-mobility transistor, X-Band, power amplifier, satellite communication

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