Shahriar JAMASB
Investigation of the mechanism of transport across the poly/monocrystalline silicon interface in polysilicon-emitter bipolar transistors based on variations in the interface treatment process
Turkish Journal of Electrical Engineering and Computer Science
2019-Cilt: 27 - Sayı: 5
3923-3934
Heterojunction bipolar transistor,
polysilicon emitter,
semiconductor-insulator interfaces,
series emitter resistance,
tunneling
100
105