Abdulkerim KARABULUT,
İkram ORAK,
Abdülmecit TÜRÜT
Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-k interfacial layer
Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-k interfacial layer
International Journal of Chemistry and Technology
2018-Cilt: 2 - Sayı: 2
116-122
Metal-Oxide-semiconductor structures,
GaAs semiconductor,
Hafnia HfO2,
Atomic layer deposition (ALD) technique
174
144