Doğan ÖZASLAN, Mustafa GÜNEŞ, Cebrail GÜMÜŞ

Sılar metodu ile hazırlanan Cu2O ince filmlerin fiziksel özellikleri

Silar metodu kullanılarak 70 °C’de cam alttabanlar üzerine polikristal Cu2O ince filmleri elde edildi. XRD analizleri filmlerin kübik yapıda olduğunu gösterdi ve örgü parametreleri hesaplandı. Filmlerin yüzey morfolojisi alan emisyonlu taramalı elektron mikroskobu (FE-SEM) ile görüntülendi. Filmlerin optik özelliklerini belirlemek için UV/vis spektrofotometresi kullanılmıştır. Filmlerin oda sıcaklığındaki optik geçirgenlik (% T) değerleri 300-1100 nm dalga boyu aralığında belirlenmiştir. Yarıiletken Cu2O ince filmlerinin görünür bölgedeki optik geçirgenlik değerleri %50-70 olarak bulunmuştur. Filmlerin enerji bant aralığı değerleri (Eg) 2.53-2.62 eV bulundu.

Anahtar Kelimeler:

Silar metodu, İnce film, Cu2O, Fiziksel özellikler

Physical properties of Cu2O thin films prepared by silar method

Polycrystalline Cu2O thin films were obtained on glass substrates using by silar method at 70 °C. XRD analysis showed the films are a cubic structure and lattice parameters were calculated. The surface morphology of the films were imaged by FE-SEM (Field Emission Scanning Electron Microscope). In order to determine the optical properties of the Cu2O thin films UV/vis spectrophotometer was used. Optical transmittance (T %) values of the Cu2O films were determined in the wavelength range 300-1100 nm at room temperature. Semiconductor Cu2O of the thin films optical transmittance values were found to be 50-70% in the visible region. Energy band gap values (Eg) of the films were found to be 2.53-2.62 eV.

Keywords:

Silar method, Thin film, Cu2O, Physical properties,

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