Mustafa Şükrü KURT

Saçtırma Yöntemi ile Üretilen Işığa Duyarlı Germanyum Katkılı Tungsten Oksit Filmin Elektriksel Karakterizasyonu

Magnetron saçtırma yöntemi kullanılarak Al kontaklı p-tipi Si altlık üzerine %3.1 Ge katkılı WOx katmanı büyütülerek p-n tipi Al/Si/WOx(%3.1Ge) eklemi elde edilmiştir. SEM ve EDS analizi sonuçları yüzeyin pürüzsüz ve homojen bir yapıya sahip olduğunu ve sırasıyla %93.7 W, 3.1% Ge ve 3.3% O oranlarından oluştuğunu göstermektedir. Elektriksel özelliklerin incelenebilmesi için üretilen aktif tabaka üzerine Ag nokta kontaklar atılarak sonuçta Al/Si/WOx(%3.1Ge)/Ag yapısı elde edilmiştir. Üretilen heteroeklemin karanlık ve değişik ışık şiddetleri altında ±4V potansiyel aralığında I-V ölçümleri yapılarak diyot parametreleri (seri direnç, engel yüksekliği, diyot idealite faktörü, ters doyum akımı) incelenmiştir. Diyot idealite faktörünün ve seri direncin sırasıyla 3.7-5.68 ve 0-20Ω arasında, engel yüksekliğinin ise 0.12-0.18 eV arasında değerler aldığı ve ters doyma akımının ışık şiddetine bağlı değişim gösterdiği saptanmıştır. Heteroeklemi'nin tipik fotodiyot davranışı gösterdiği ve 60mW/cm2 ışık şiddeti altında maksimum doldurma faktörü değerinin 0.2660 olduğu belirlendi.

Anahtar Kelimeler:

Tungsten Oksit-Germanyum, Metal-oksit yarıiletken, Fotodiyot, p-n tip eklem, I-V, Tungsten Oxide-Germanium, Metal-oxide semiconductor, Photodiode, p-n type junction

Electrical Characterization of Photosensitive Germanium Doped Tungsten Oxide Film Produced by Sputtering Method

A p-n type Al/Si/WOx(3.1% Ge) junction was obtained by growing 3.1% Ge doped WOx layer on an Al contacted p-type Si substrate using magnetron sputtering method. The results of SEM and EDS analysis show that the surface has a smooth and homogeneous structure and consists of 93.7% W, 3.1% Ge and 3.3% O, respectively. In order to examine the electrical properties, Ag dot contacts were deposited on the produced active layer and Al/Si/WOx(3.1%Ge)/Ag structure was obtained. Diode parameters (series resistance, barrier height, diode ideality factor, reverse saturation current) were investigated by making I-V measurements in the ±4V potential range under dark and different light intensities of the produced heterojunction. It was observed that the diode ideality factor and series resistance have values between 3.7-5.68 and 0-20Ω, respectively, and the barrier height have values between 0.12-0.18 eV, and the reverse saturation current changed depending on the light intensity. The heterojunction demonstrated standart photodiode behaviour, with a maximum fill factor value of 0.2660 under 60mW/cm2 light intensity.

Keywords:

Tungsten Oxide-Germanium, Metal-oxide semiconductor, Photodiode, p-n type junction, I-V,

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