Ahmet Kürşat BİLGİLİ, Mustafa Kemal ÖZTÜRK, Süleyman ÖZÇELİK, Adem TATAROĞLU

Dereceli ve derecesiz InGaN/GaN MQW’lerin dielektrik özellikleri

Bu çalışmada, Metal organik kimyasal buhar biriktirme(MOCVD) metoduyla safir (Al2O3) üzerine büyütülen dereceli ve derecesiz InGaN/GaN MQW’lerin dielektrik özellikleri incelendi. Dereceli tabakanın MQW’nin karakteristikleri üzerine etkisini fark edebilmek için bazı GaN tabakalar In aşılanarak büyütülmüştür. Filmlerin dielektrik fonksiyonu Swanepoel zarf metodu ile belirlenmiştir. Filmlerin gerçel ve imajiner dielektrik katsayıları, kırılma indisi ve soğurma katsayıları kullanılarak hesaplanmıştır. Dereceli ve derecesiz örnekler için kırılma indisi değerlerindeki farklılıklar tartışılmıştır. Dielektrik fonksiyonunun belirlenmesi sırasında, her iki numune için kompleks ve imajiner dielektrik sabitlerinin foton enerjisine göre değişimleri gösterilmiştir

Anahtar Kelimeler:

Swanepoel zarf metodu, dereceli, derecesiz, InGaN

Dielectric Properties of Graded and Non-Graded InGaN/GaN MQWs

In this study, dielectric properties of graded and non-graded InGaN/GaN multi quantum wells (MQWs), grown on sapphire(Al2O3) wafer by Metal Organic Chemical Vapor Deposition (MOCVD) technique, are investigated. In order to notice graded layer effect on characteristics of MQWs some of GaN layers are grown by doping In atoms. Dielectric function of films are determined by Swanepoel envelope method. Real and imaginer dielectric coefficient of the films are calculated by using refraction index and extinction coefficient. Differences in refraction index values are discussed for graded and non-graded samples. During determination of dielectric function variations of complex and imaginer dielectric coefficients with photon energy are shown for both samples

Keywords:

Swanepoel envelope method, graded, non-graded, InGaN,

PDF

___

Williams M.G., Tomlinson R. D., Hampshire M. J. (1969). X-ray Determination of the Lattice Parameters and Thermal Expansion of Cadmium Telluride in the Temperature Range 20–420oC. Solid State Commun. 7, (24) : 1831-1832.
Willardson R. K., Beer A. C. (1978). Cadmium Telluride. Semiconductor and Semimetals. 13, 115
Straussn A.J. (1977). Physical Properties of CdTe. Rev. Phys. Appl. 12, (2) : 167-184
Kroger F. A. (1977). The Defect Structure of CdTe. Rev. Phys. Appl. 12 ,(2) : 205- 210.
Gu J., Kitahara T., Kawakami K., Sakaguchi T. (1975). Ohmic Contact and Impurity Conduction in p–doped CdTe. J. Appl. Phys. 46, (3) : 1184-1185.
Selim F. A., Kroger F. A. (1977). The Defect Structure of Phosphorus-Doped CdTe. J. Electrochem. Soc. 124,(3) : 401- 408.
Anthony T. C., Fahrenbruch A. L., Peters M. G., Bube R. H. (1985). Electrical Properties of CdTe Films and Junctions. J. Appl. Phys. 57,(2) : 400-41.
Chu T. L., Chu S. S., Firszt F., Naseem H. A., Stawski R. (1985). Deposition and Characterization of p-type Cadmium Telluride Films. J. Appl. Phys. 58,(3) : 1349-1355.
Heavens O. S. (1965). Optical Properties of Thin Solid Films. DoverPublications, New York. pg. 51.
Rogalski A. (2002). Infrared Detectors: An Overview. Infrared Phys. and Technol. 43: 187-210.
Babonas G. A., Bendoryus R.A., Shileika A. Y. (1971). Photoluminescence of CdTe under hydrostatic pressure. Sov. Phys. Semicond. 5:392.
Bilgili A.K., Akpınar Ö., Öztürk M.K. (2019). A detailed study on optical properties of InGaN/GaN/Al2O3 multi quantum wells. J Mater Sci: Mater Electron. 30, 10391–10398
Haochen Z., Chen H., Kang S., Huabin Y., Chong X., Danhao W., Zhongling L., Haiding S. (2021). Compositionally graded III-nitride alloys: building blocks for efficient ultraviolet optoelectronics and power electronics. Reports on Progress in Physics. 84 044401
Fairbanks E., Gates M. (1997). Adaptation of Thin Film PV Technology For Use Space. Twenty sixth IEEE PV Specialist Conference Anaheim, CA.
Kars D. İ., Ozturk M. K., Çörekçi S., Tamer M., Bas Y., Özçelik S., Özbay E. (2017). Microstructural Analysis with Graded and Non-Graded Indium in InGaN Solar Cell. Journal of Nanoelectronics and Optoelectronics. vol.12, no.2, pp.109-117, 2017