Bridgman Tekniği ile Büyütülen Saf ve Bor Katkılı InSe Tek Kristallerinin Morfolojik ve Optik Özelliklerinin Araştırılması

Bridgman tekniği ile büyütülen saf, % 0.1 ve % 0.5 bor katkılı InSe tek kristallerinin morfolojik ve optik soğurma özellikleri araştırıldı. Saf, % 0.1 ve % 0.5 bor katkılı InSe tek kristallerinin morfolojik ve optik soğurma özellikleri AFM, SEM ve UV-Vis spektrofotometre teknikleri ile araştırıldı. SEM analizleri geniş yüzeyli yüksek kalitede InSe tek kristallerinin stokiyometrik eriyikten büyüdüğünü gösterdi. Optik soğurma spektrumlarının analizinden saf ve % 0.1 bor katkılı InSe tek kristallerine oranla % 0.5 bor katkılı InSe tek kristalinin eksiton pikinin genişlediği görüldü. Ayrıca, bor katkısı sonucu soğurma şiddetinin azaldığı ve soğurma kenarının daha uzun dalga boyuna doğru kaydığı görüldü. Optik soğurma ölçümlerinden, hem saf hem de bor katkılı InSe tek kristallerinin direkt yasak enerji bant aralığına sahip olduğu gözlendi. Ayrıca, saf InSe tek kristalinin yasak enerji bant aralığına oranla bor katkılı InSe tek kristallerinin yasak enerji bant aralıklarının katkı oranına bağlı olarak azaldığı görüldü.

Anahtar Kelimeler:

Bridgman, saf ve bor katkılı InSe tek kristalleri, optik soğurma

Investigation of Morphological and Optical Properties of Undoped and Boron Doped InSe Single Crystals Grown by Bridgman Technique

Morphological and optical absorption properties of undoped, 0.1 at% and 0.5 at% boron doped InSe single crystals grown by Bridgman technique were investigated. Morphological and optical absorption properties of undoped, 0.1 at% and 0.5 at% boron doped InSe single crystals have been investigated by AFM, SEM and UV-Vis spectrophotometer techniques. SEM analysis showed that high quality InSe single crystals with large surface area were grown from the stoichiometric melt. From the analysis of optical absorption spectra showed that the exciton peak in 0.5 at% boron doped InSe single crystal expanded by relative to the undoped and 0.1 at% boron doped InSe single crystals. In addition, it was seen that the intensity of absorption decreased and absorption edge shifted to longer wavelengths as a result of boron doping. Optical absorption measurements showed that both undoped and boron doped InSe single crystals had direct forbidden band energies. Also, energy band gaps in boron doped InSe single crystals decreased with increasing boron concentration relative to the energy band gap of undoped InSe single crystal.

Keywords:

Bridgman, undoped and boron doped InSe single crystals, optical absorption,

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