Saime CETİN, Semran SAĞLAM, Süleyman ÖZÇELİK, Ekmel ÖZBAY

THE EFFECT OF GROWTH CONDITIONS ON THE OPTICAL AND STRUCTURAL PROPERTIES OF InGaN/GaN MQW LED STRUCTURES GROWN BY MOCVD

Five period InGaN/GaN MQW LED wafers were grown by low pressure MOCVD on an AlN buffer layer, which was deposited on a c-plane (0001)-faced sapphire substrate. The effect of growth conditions, such as the well growth time, growth temperatures, and indium flow rate on the properties of MQW structures were investigated by using high resolution X-ray diffraction and room temperature photoluminescence. By increasing growth temperature, the emission wavelengths showed a blue-shift while it red-shifted via an increase in the indium flow rate. The emission wavelength can be tuned by way of changing the well growth time of the samples.

Keywords:

Metalorganic chemical vapor deposition, InGaN Light emitting diode, Multi quantum well, High resolution X-ray diffraction, Photoluminescence,

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Gazi University Journal of Science-Cover

Yayın Aralığı: Yılda 4 Sayı
Başlangıç: 1988
Yayıncı: Gazi Üniversitesi, Fen Bilimleri Enstitüsü

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