Electronic features of Gaussian quantum well as depending on the parameters

In this study, the electronic characteristics of Gaussian quantum well have been examined asdependent on the parameters such as the concentration ratio, the even power parameter andGaussian potential range. The energy levels and the wave functions in Gaussian quantumwell (GQW) under effective mass approach were concluded by Schrödinger equationsolution. According to our results, all parameters have a great impact on the electroniccharacteristics of GQW. These characteristics have practical interest in the design ofadjustable semiconductor devices using such structures.

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[1] Enders B.G., Lima F.M.S., Nunes O.A.C., Fonseca A.L.A., Agrello D.A., Qu F., DaSilva J.E. F., Freire V.N., Electronic properties of a quasi-two dimensional electron gas in semiconductor quantum wells under intense laser fields, Phys. Rev. B 70 (3) (2004) 035307- 035315
[2] Radu A., Niculescu E. C., Cristea M., Laser dressing effects on the energy spectra in different shaped quantum wells under an applied electric field, J. Optoelectron. Adv. Mater. 10 (2008) 2555-2563
[3] Raigoza N., Morales A. L., Duque C. A., Effects of hydrostatic pressure on donor states in symmetrical GaAs-Ga0.7Al0.3As double quantum wells, Physica B 363 (2005) 262-270.
[4] Peter A. J., Navaneethakrishnan K., Simultaneous effects of pressure and temperature on donors in a GaAlAs/GaAs quantum well, Superlatt. Microstruct. 43 (2008) 63-71.
[5] Ozturk E., Simultaneous effects of the intense laser field and the electric field on the nonlinear optical properties in GaAs/GaAlAs quantum well, Opt. Commun. 332 (2014) 136-143.
[6] Zhao G. J., Liang X. X., Ban S. L., Binding energies of donors in quantum wells under hydrostatic pressure, Phys. Lett. A 319 (2003) 191-197.
[7] Ozturk E., Sokmen I., Nonlinear intersubband absorption and refractive index changes in square and graded quantum well modulated by temperature and hydrostatic pressure, J. Lumin. 134 (2013) 42-48.
[8] Kasapoglu E., Duque C. A., Mora-Ramos M. E., Restrepo R. L., Ungan F., Yesilgul U., Sari H., Sokmen I., Combined effects of intense laser field, electric and magnetic fields on the nonlinear optical properties of the step-like quantum well, Materials Chemistry and Physic, 154 (2015) 170-175.
[9] Ozturk O., Ozturk E., Elagoz S., Linear and nonlinear optical absorption coefficient and electronic features of triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on barrier widths, Optik 180 (2019) 394-405.
[10] Lin C. Y., Ho Y. K., Photoionization cross sections of hydrogen impurities in spherical quantum dots using the finite-element discretevariable representation, Phys. Rev. A 84 (2011) 023407-023415.
[11] Xie W.F., Two interacting electrons in a spherical Gaussian confining potential quantum well, Commun. Theor. Phys. 42 (2004) 151-154.
[12] Sari H., Ungan F., Sakiroglu S., Yesilgul U., Kasapoglu E., Sokmen I., Electron-related optical responses in Gaussian potential quantum wells: Role of intense laser field, Physica B 545 (2018) 250-254 .
[13] Niculescu E. C., Eseanu N., Spandonide A., Laser fıeld effects on the interband transitions in differently shaped quantum wells, U.P.B. Sci. Bull. Series A, 77 (4) (2015) 281-292.
[14] Boda A., Boyacioğlu B., Chatterjee A., Ground state properties of a two-electron system in a three-dimensional GaAs quantum dot with Gaussian confinement in a magnetic field, Journal of Applied Physics 114 (2013) 044311- 044317.
[15] Zorry P. S. Jr., Quantum well lasers, Academic Press, Boston, p.79 (1993).
[16] [Doncev V., Saraydarov M., Shtinkov N., Germanova K., Vlaev S. J., Diffused GaAs/AlGaAs quantum wells with equidistant electronic states, Mat. Sci. Engin. C 19 (1-2) (2002) 135-138.
[17] [Xie W., Potential-shape effect on photoionization cross section of a donor in quantum dots, Superlatt. Microstruct. 65 (2014) 271-277.