Arzu EKİNCİ, Muhammed GÜNBAT, Sabit HOROZ, Ömer ŞAHİN

La katkılı ZnS kuantum noktalarının SILAR yöntemi ile sentezlenmesi ve onların özelliklerinin incelenmesi

Bu çalışmada, ardışık iyonik tabaka adsorpsiyon ve reaksiyonu (SILAR) yöntemi kullanılarak oda sıcaklığında sentezlenen La (%1)-katkılı ZnS kuantum noktalarının (QDs) yapısal, morfolojikyüzeysel, optik ve fotovoltaik özellikleri sırasıyla x- ray kırınımı (XRD), taramalı elektron mikroskobu (SEM), opticabsorpsiyon optik absorpsiyon ve gelen fotonun elektrik akımına dönüşüm verimi (IPCE) gibi ölçümler yapılarak incelendi. La katkı maddesinden dolayı La katkılı ZnS QD’lara ait parçacık boyutu ve enerji band bant aralığının saf ZnS’ye kıyasla değiştiği gözlemlendi. Ayrıca, ilk defa bu mecvcut mevcut çalışmada, IPCE ölçümü yapılarak La katkılı ZnS QD’lara ait fotovoltaik özellikler incelendi. Böylece, La katkılı ZnS QD’ların güneş pil uygulamalarında umut verici hassaslaştırıcılar olarak kullanılabileceği bu çalışmada önerilmektedir.

Synthesis of La doped ZnS quantum dots by SILAR method and investigation of their properties

In this study, the structural, morphological, optical and photovoltaic properties of La-(%1)-doped ZnS quantum dots (QDs) synthesized at room temperature using successive ionic layer adsorption and reaction (SILAR) method were investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM) optical absorption and incident photon-to-electron conversion efficiency (IPCE),respectively. It was observed that the particle size and energy band gap of La-doped ZnS QDs were changed compared to pure ZnS due to the La additive.Furthermore, photovoltaic properties of La-doped ZnS QDs were investigated by IPCE measurement for the first time in this current study. Thus, this study suggests that La-doped ZnS QDs can be used as promising sensitizers in solar cell applications.

Keywords:

Zinc sullfide photovoltaic, characterization, doping, SILAR method,

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