Handan AYDİN, Fahrettin YAKUPHANOGLU, Cihat AYDIN

Amorf Yarıiletken InTe İnce Filminin Üretilmesi ve Karakterizasyonu

Bu çalışmada, InTe amorf yarıiletken malzemenin, X ışını difraksiyonu, elektriksel iletkenliği, optik ve dielektrik özellikleri araştırıldı. X-ışını difraksiyon sonuçları InTe numunesinin amorf yapıya sahip olduğunu gösterir. Numunenin elektriksel iletkenliğinin sıcaklığa bağlılığı araştırıldı ve bulunan sonuçlar numunenin bir amorf yarıiletken olduğunu doğrular. InTe numunesi fotoiletkenlik özellik gösterir. Numunenin optik band aralığı ve optik sabitleri geçirgenlik ve yansıma spektrumları kullanılarak hesaplandı. Numunede doğrudan optik geçişler meydana geldi. Numunenin kırılma indisi dispersiyon eğrisi tek osilatör modeline uydu. Numunenin dielektrik özellikleri frekansın ve sıcaklığın bir fonsiyonu olarak araştırıldı. Dielektrik parametrelerin sıcaklık ve frekansla değiştiği bulundu. Elektrik modulus eğrileri dielektrik relaksasyon olayını analiz etmek için kullanıldı.

Anahtar Kelimeler:

InTe, Elektriksel İletkenlik, Amorf Yarıiletken, Dielektrik Sabiti

Fabrication and Characterization of Amorphous Semiconductor InTe Thin Film

In this study, X-ray diffraction, electrical conductivity, optical and dielectrical properties of the InTe amorphous semiconductor material have been investigated. X-ray diffraction results show that InTe sample has an amorphous structure. Temperature dependence of electrical conductivity of the sample has been investigated and the obtained results confirm that InTe is an amorphous semiconductor. The InTe sample shows photoconductivity behavior. The optical band gap and optical constants of the sample were calculated using transmittance and reflectance spectra. In the sample, the direct optical transitions take place The refractive index dispersion curve of the sample obeys the single oscillator model. The dielectrical properties of the sample have been investigated as a function of frequency and temperature. It was found that the dielectrical parameters were changed with temperature and frequency. The electrical modulus curves were used to analyze the dielectrical relaxation processes.

Keywords:

: InTe, Electrical Conductivity, Amorphous Semiconductour, Dielectric constant,

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[1] GÜNDEM, E.Ü., Electrıcal and Optical Propertıes of Amorphous Semiconductıng aSi:/A-SiNx : H Multilayer Fılms, Yüksek Lisans Tezi, Hacettepe Üniversitesi.
[2] MACHENZİE, J.D., 1970, J. Non-Cryst. Solids 2, 16.
[3] HOWARD AND ROCKSTAD, K., 1970, J. Non-Cryst. Solids 2, 192.
[4] MASUDA, A., YONEZAWA, Y., MORIMOTO, A., KUMEDA, M., AND SHIMIZU, T., 1997, J. NonCryst. Solids 217, 21.
[5] STUKE, J., 1953, Z. Phys. 134, 194p.
[6] POLLAK M., AND GEBALLE, T.H., 1961, Phys. Rev. 122, 1742.
[7] AUSTIN, I.G., AND MOTT, N.F., 1969, Adv. Phys. 18,41.
[8] PİKE, G.E., 1972, Phys. Rev. B6, 1572.
[9] ELLİOTT, S.R., 1977, Philos. Mag. B 36, 291.
[10] LONG, A.R ., 1982, Adv. Phys. 31, 553.
[11] MİTSUYU. T ., WASA, K., 1981, JPn. J. Appl. Phys. 20 L 48.
[12] EASWARAN, N., BALASUBRAMANİAN, C., NARAYANDASS, S.A.K., MANGALARAJ, D., 1992, Phys. Stat. Sol. 129, 443.
[13] SHANG, G., KUNZE, K., HANDEN, M.J., 1996, Smith. Chem. Vapor. Electron Depos. 2, 242.
[14] JULİEN, C., CHEVY, A., SİAPKAS, D., 1990, Phys stat Sol A 118: 553.
[15] YUDASAKA, M., MATASYOKA, T., NAKANİSHİ, K., 1987, Thin Solid Films 146, 65.
[16] ZASLAVSKİİ, A.I ., SERGEEVA, V.M., 1961, Sov. Phys. Solid state 2, 2556.
[17] BLERİS, G.L ., KARAKOSTAS, T., ECONOMOV, N.A., DE RİDDER, R., 1973, Phys. Stat. Sol. A 50, 579.
[18] AFİFİ, M.A., ABD. EL-WAHABB, E., BEKHEET, A.E., ATYİA, H.E., 2000, Acta Phys. A 28, 403.
[19] JENKİNS, F.A., WHİTE, H.E., 1957, Fundementals of Optics, McGraw-Hill, New York.
[20] OKUTAN, M., BASARAN. E., BAKAN. H.I., YAKUPHANOGLU. F., 2005, AC conductivity and dielectric properties of Co-doped TiO2 . Physica B 364, 300–305.
[21] YAKUPHANOGLU, F., ARSLAN, M., YILDIZ, S.Z., 2005, Determination and analysis of the dispersive optical constants of the 2,9,16,23- tetraneopentoxyphthalocyaninatozinc (II) charge transfer complex with 2,3-dichloro-5,6-dicyano- p - benzoquinone thin film.
[22] MOTT, N. F., DAVİS, E.A., 1979, Electronic Processes in Non-Crystalline Materials: Clarendon Pres- Oxford, 595p
[23] OUMOUS, H. VE HADİRİ, H., 2001, Optical and Electrical Properties of Annealed CdS Thin Films Obtained From a Chemical Solution, This Solid Films, 386, 87-90.
[24] PANKOVE, J.I., 1971, Optical Processes in Semiconductours, Prentice-Hall, Inc. Englewood cliffs, New Jersey.
[25] CODY, G.D., 1984, A Comparison of the Optical Absorption edge of Crystalline and Amorphous Silicon, Semiconductors and Semimetals (Academic Press, Orlando ), Vol.21B, p.11.
[26] YAKUPHANOGLU, F., CUKUROVALİ, A., YİLMAZ, İ., 2005, Refractive index and optical absorption properties of the complexes of a cyclobutane containing thiazolyl hydrazone ligand. Optical Materials 27, 1363–1368
[27] MİNKOV, D.A., 1989, Calculation of the Optical Constants of Thin Layer Upon a Transparent Substrate from the Reflection Spectrum, J. Phys. D: Appl. Phys., 22, 1157- 1161.
[28] YAKUPHANOGLU, F., AYDOĞDU, Y., SCHATZSCHNEİDER, U., RENTSCHLER, E., 2003, Solid State Communications. 128, 63-67.
[29] AYDİN H., TATAROGLU A., AL-GHAMDİ AHMED A., YAKUPHANOGLU F., EL-TANTAWY FARİD, FAROOQ W.A., (2015). A novel type heterojunction photodiodes formed junctions of Au/LiZnSnO and LiZnSnO/p-Si in series, Journal of Alloys and Compounds, 625, 18–25
[30] SOYLU M., AYDİN H., AL-GHAMDİ AHMED A., FAROOQ W. A., YAKUPHANOGLU F., (2014). Study of optical and electrical assessments of the quaternary MgZnSnO system containing different Mg content, J Mater Sci: Mater Electron, 25, 4235–4245.
[31] C. AYDIN, N.M. KHUSAYFAN, A.A. AL-GHAMDI, F. EL-TANTAWY, W.A. FAROOQ, F. YAKUPHANOGLU, Facile synthesis, electrical and optical properties of Cu-doped GaN nanorods by sol-gel technique, Journal of Sol-Gel Science and Technology, 78 (2016) 68-75.
[32] AYDİN, H., MANSOUR, SH.A., AYDİN, C., AL-GHAMDİ AHMED., OMAR, A., AL-HARTOMY, A., EL-TANTAWY, F., YAKUPHANOGLU F., (2012). Optical properties of nanostructure boron doped NiO thin films. J Sol-Gel Sci Technol. 64, 728-733.