Cihat Aydın, Handan Aydın, Fahrettin Yakuphanoğlu

Amorf Yarıiletken InTe İnce Filminin Üretilmesi ve Karakterizasyonu

Bu çalışmada, InTe amorf yarıiletken malzemenin, X ışını difraksiyonu, elektriksel iletkenliği, optik ve dielektrik özellikleri araştırıldı. X-ışını difraksiyon sonuçları InTe numunesinin amorf yapıya sahip olduğunu gösterir. Numunenin elektriksel iletkenliğinin sıcaklığa bağlılığı araştırıldı ve bulunan sonuçlar numunenin bir amorf yarıiletken olduğunu doğrular. InTe numunesi fotoiletkenlik özellik gösterir. Numunenin optik band aralığı ve optik sabitleri geçirgenlik ve yansıma spektrumları kullanılarak hesaplandı. Numunede doğrudan optik geçişler meydana geldi. Numunenin kırılma indisi dispersiyon eğrisi tek osilatör modeline uydu. Numunenin dielektrik özellikleri frekansın ve sıcaklığın bir fonsiyonu olarak araştırıldı. Dielektrik parametrelerin sıcaklık ve frekansla değiştiği bulundu. Elektrik modulus eğrileri dielektrik relaksasyon olayını analiz etmek için kullanıldı.

Fabrication and Characterization of Amorphous Semiconductor InTe Thin Film

In this study, X-ray diffraction, electrical conductivity, optical and dielectrical properties of the InTe amorphous semiconductor material have been investigated. X-ray diffraction results show that InTe sample has an amorphous structure. Temperature dependence of electrical conductivity of the sample has been investigated and the obtained results confirm that InTe is an amorphous semiconductor. The InTe sample shows photoconductivity behavior. The optical band gap and optical constants of the sample were calculated using transmittance and reflectance spectra. In the sample, the direct optical transitions take place The refractive index dispersion curve of the sample obeys the single oscillator model. The dielectrical properties of the sample have been investigated as a function of frequency and temperature. It was found that the dielectrical parameters were changed with temperature and frequency. The electrical modulus curves were used to analyze the dielectrical relaxation processes.

PDF

___

[1]E.Ü. Gündem, , Electrıcal and Optical Propertıes of Amorphous Semiconductıng aSi:/A-SiN x : H Multilayer Fılms, Yüksek Lisans Tezi, Hacettepe Üniversitesi.
[2]J.D. Machenzie, “Electronic conduction in noncrystalline solids” J. Non-Cryst. Solids, vol. 2, pp 16-26, January 1970
[3]H.K. Rockstad, “Hopping conduction and optical properties of amorphous chalcogenide films” J. Non-Cryst. Solids, vol. 2, pp 192-202, January 1970.
[4]A. Masuda, Y.Yonezawa, A. Morımoto, M. Kumeda, and T. Shımızu, Influence of Pb incorporation on light-induced phenomena in amorphous Ge100−x−yPbxSy thin films”, J. NonCryst. Solids, vol. 7, no:2-3, pp 121-135, September 1997.
[5]J. Stuke, “Review of optical and electrical properties of amorphous semiconductors” J. Non-Cryst. Solids, vol. 4, pp 1-26, April 1970
[6]M. Pollak and T.H. Geballe, “Low-Frequency Conductivity Due to Hopping Processes in Silicon”, Phys. Rev., vol. 122, pp 1742-1754, June 1961.
[7]I.G. Austın, , and N.F. Mott,“Polarons in crystalline and non-crystalline materials”, Adv. Phys., vol. 18, no 71, p.41- 102, January 1969.
[8]G.E Pike,., “AC Conductivity of Scandium Oxide and a New Hopping Model for Conductivity”, Phys. Rev. B, vol. 6, pp 1572, August 1972.
[9]S.R. Elliott, “A theory of AC conduction in chalcogenide glasses”, Philos. Mag. B, vol.36, pp 1291-1304. July 1977.
[10]A.R Long., “Frequency-dependent loss in amorphous semiconductors”, Adv. Phys., vol. 31, pp 553-637, June 1982.
[11]T. Mitsuyu, K. Wasa, “High Dielectric Constant Films of Amorphous LiNbO3 Prepared by Sputtering Deposition”, JPn. J. Appl. Phys., vol. 20, no 1, pp L 48, December 1980
[12]N. Easwaran, C. Balasubramanian, , S.A.K. Narayandass, , D. Mangalaraj, “Dielectric and AC Conduction Properties of Thermally Evaporated Lithium Niobate Thin Films” Phys. Stat. Sol., vol. 129, pp 443, February 1992
[13]G. Shang, , K. Kunze, , M.J. Hampden, ,” Low‐ temperature chemical vapor deposition of indium sulfide thin films using a novel single‐source indium thiocarboxylate compound as precursor”, Smith. Chem. Vapor. Electron Depos., vol. 2, pp 242, November 1996
[14]C. Julien, , A. Chevy, , D. Siapkas, “Optical properties of In2Se3 phases” , Phys stat Sol A, vol. 118, pp 553, April 1990.
[15]M. Yudasaka, T. Matasyoka, K.Nakanishi, “Indium selenide film formation by the double-source evaporation of indium and selenium”, Thin Solid Films, vol. 146, pp 65, January 1987.
[16]A.I Zaslavskii., V.M. Sergeeva, “The Polymorphısm Of In2Te3”, Sov. Phys. Solid state, vol. 2, pp 2556, March 1961.
[17]G.L . Bleris, T.Karakostas, N.A. Economov, R. De Ridder, “The ordered state of In2Te3 and its relation to the transition state”, Phys. Stat. Sol. A, vol. 50,pp 579, July 1978.
[18]M.A.Afifi, E. Abd. El-Wahabb, A.E. Bekheet, H.E. Atyia, , “Effect of Annealing on the ac conductivity and the dielectric properties of In2Te3 thin films”, Acta Phys. A, vol. 28, pp 403, September 2000.
[19]F.A. Jenkins, , H.E. White, Fundementals of Optics, McGraw-Hill, New York, 1957.
[20]M. Okutan, E. Basaran, H.I. Bakan, F. Yakuphanoglu, “AC conductivity and dielectric properties of Co-doped TiO2”, Physica B, vol. 364, pp 300-305, November 2005.
[21]F. Yakuphanoglu, M. Arslan, S.Z. Yıldız, “Determination and analysis of the dispersive optical constants of the 2,9,16,23 tetraneopentoxyphthalocyaninatozinc (II) charge transfer complex with 2,3-dichloro-5,6-dicyano- p - enzoquinone thin film”. Volume 27, Issue 6, Pages 1153-1158, March 2005.
[22]N. F. Mott, , E.A. Davis, , Electronic Processes in NonCrystalline Materials: Clarendon Pres- Oxford, 595p, 1979.
[23]H. Oumous and H. Hadiri, “Optical and Electrical Properties of Annealed CdS Thin Films Obtained From a Chemical Solution”, This Solid Films, vol. 386, pp 87-90, september 2001.
[24]J.I. Pankove, Optical Processes in Semiconductours, Prentice-Hall, Inc. Englewood cliffs, New Jersey, 1971.
[25]G.D. Cody, “A Comparison of the Optical Absorption edge of Crystalline and Amorphous Silicon, Semiconductors and Semimetals”, (Academic Press, Orlando ), Vol.21B, p.11, December 1984.
[26]F. Yakuphanoglu, A. Cukurovali, İ. Yilmaz, “Refractive index and optical absorption properties of the complexes of a cyclobutane containing thiazolyl hydrazone ligand”, Optical Materials, Vol. 27, pp 1363-1368, April 2005.
[27]D.A. Minkov, “Calculation of the Optical Constants of Thin Layer Upon a Transparent Substrate from the Reflection Spectrum”, J. Phys. D: Appl. Phys., vol. 22, pp 1157- 1161, May 1989.
[28]F. Yakuphanoglu, Y. Aydoğdu, U. Schatzschneider, E. Rentschler, “DC and AC conductivity and dielectric properties of the metal-radical compound: Aqua [bis(2- dimethylaminomethyl-4-NIT-phenolato)]copper(II), Solid State Communications, vol 128, pp 63-67, october 2003
[29]H. Aydin, A. Tataroglu, A. Al-Ghamdi Ahmed, F. Yakuphanoglu, F. El-Tantawy, W.A Farooq, “A novel type heterojunction photodiodes formed junctions of Au/LiZnSnO and LiZnSnO/p-Si in series”, Journal of Alloys and Compounds, vol 625, pp 18-25, july 2015.
[30]M. Soylu, H. Aydin, A. A. Al-Ghamdi, W. A Farooq, F. Yakuphanoglu, “Study of optical and electrical assessments of the quaternary MgZnSnO system containing different Mg content”, J Mater Sci: Mater Electron,, vol 25, pp 4235-4245, march 2014.
[31]C. Aydin, N.M. Khusayfan, A.A. Al-Ghamdi, F. ElTantawy, W.A. Farooq, F. Yakuphanoglu, “Facile synthesis, electrical and optical properties of Cu-doped GaN nanorods by sol-gel technique”, Journal of Sol-Gel Science and Technology, vol 78, pp 68-75, February 2016.
[32]H. Aydin, Sh.A. Mansour, C.Aydin, A. Al-Ghamdi, O.A. Al-Hartomy, F. El-Tantaw , F. Yakuphanoglu, “Optical properties of nanostructure boron doped NiO thin films”, J Sol-Gel Sci Technol, vol 64, pp 728-733, may 2012.