Tuğçe ATAŞER, Durmuş DEMİR, A. Kürşat BİLGİLİ, M. Kemal ÖZTÜRK, Süleyman ÖZÇELİK

GaN/AlN/4H-SiC Epitaksiyel Yapının AlN Tampon Tabakasının Mozaik Kusurları

Metal Organik Kimyasal Buhar Biriktirme (MOCVD) yöntemiyle 4H-SiC alttaşın üzerine 61.34, 116.88, 129.46 ve 131.50 nm kalınlıklarında büyütülen AlN tampon tabakaların yapısal özellikleri yüksek çözünürlüklü X-ışını kırınımı (HR-XRD) tekniği ile incelendi. AlN tampon tabakanın arayüz pürüzlülüğü XRR tekniği ile belirlendi. 131.50 nm kalınlığındaki numunenin arayüz pürüzlülüğü 0.50 nm olarak bulundu. Mozaik kusurlar, eğim açısı, düşey ve yatay koherens uzunlukları HR-XRD tekniği ile karakterize edildi. 131.50 nm kalınlığındaki numunenin kenar ve vida tipi dislokasyonları sırasıyla 2.98x1010 ve 8.86x108 cm-2 olarak hesaplandı. Bu sonuçlar gösterdi ki bu çalışmada optoelektronik olarak yüksek performans elde edebilmek için 131.50 nm kalınlığında AlN tampon tabaka tercih edilmelidir. AlN tampon tabakanın kalınlığının iyi seçilmesi cihazın performansı açısından son derece önemlidir.

Mosaic defects of AlN buffer layers in GaN/AlN/4H-SiC epitaxial structure

Structural properties of AlN buffer layers, grown by Metal Organic Chemical Vapor Deposition (MOCVD) on 4H-SiC substratewith thicknesses of 61.34, 116.88, 129.46 and 131.50 nm, are investigated by High Resolution X-Ray Diffraction (HR-XRD)technique. Interfacial roughness of AlN buffer layer was determined by XRR technique. The interface roughness value of 131.50nm thick sample is determined as 0.50 nm. Mosaic defects, tilt angle, vertical and lateral coherence lengths are characterized byHR-XRD technique. The edge and screw dislocations of the 131.50 nm thick sample are found as 2.98x1010 and 8.86x108cm-2respectively. The results indicate that 131.50 nm thick AlN buffer layer should be used in order to gain high performance inoptoelectronic terms in this study. Thus, optimization of AlN buffer layer thickness is extremely important in device performance.

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