Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode

The study on electrical and dielectric properties of the ZnSe/p-Si diode have been investigated using admittance measurements in the frequency range of 50 kHz - 1 MHz at room temperature. The experimental values of dielectric constant and dielectric loss are found in decreasing behavior with increase in frequency due to the characteristics of the interface capacitance in the diode and so that the similar behavior was observed in loss tangent. With the contribution of the series resistance, the results of the electrical conductivity analysis indicated direct proportionality to the frequency change. Additionally, electric modulus was discussed to represent the dielectric relaxation process in the diode structure. 

Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode

The study on electrical and dielectric properties of the ZnSe/p-Si diode have been investigated using admittance measurements in the frequency range of 50 kHz - 1 MHz at room temperature. The experimental values of dielectric constant and dielectric loss are found in decreasing behavior with increase in frequency due to the characteristics of the interface capacitance in the diode and so that the similar behavior was observed in loss tangent. With the contribution of the series resistance, the results of the electrical conductivity analysis indicated direct proportionality to the frequency change. Additionally, electric modulus was discussed to represent the dielectric relaxation process in the diode structure. 

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Bibtex @araştırma makalesi { politeknik389636, journal = {Politeknik Dergisi}, eissn = {2147-9429}, address = {Gazi Üniversitesi Teknoloji Fakültesi 06500 Teknikokullar - ANKARA}, publisher = {Gazi Üniversitesi}, year = {2019}, volume = {22}, number = {1}, pages = {63 - 67}, doi = {10.2339/politeknik.389636}, title = {Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode}, key = {cite}, author = {Güllü, Hasan Hüseyin and Yıldız, Dilber Esra} }
APA Güllü, H. H. & Yıldız, D. E. (2019). Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode . Politeknik Dergisi , 22 (1) , 63-67 . DOI: 10.2339/politeknik.389636
MLA Güllü, H. H. , Yıldız, D. E. "Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode" . Politeknik Dergisi 22 (2019 ): 63-67 <
Chicago Güllü, H. H. , Yıldız, D. E. "Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode". Politeknik Dergisi 22 (2019 ): 63-67
RIS TY - JOUR T1 - Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode AU - Hasan Hüseyin Güllü , Dilber Esra Yıldız Y1 - 2019 PY - 2019 N1 - doi: 10.2339/politeknik.389636 DO - 10.2339/politeknik.389636 T2 - Politeknik Dergisi JF - Journal JO - JOR SP - 63 EP - 67 VL - 22 IS - 1 SN - -2147-9429 M3 - doi: 10.2339/politeknik.389636 UR - Y2 - 2022 ER -
EndNote %0 Politeknik Dergisi Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode %A Hasan Hüseyin Güllü , Dilber Esra Yıldız %T Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode %D 2019 %J Politeknik Dergisi %P -2147-9429 %V 22 %N 1 %R doi: 10.2339/politeknik.389636 %U 10.2339/politeknik.389636
ISNAD Güllü, Hasan Hüseyin , Yıldız, Dilber Esra . "Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode". Politeknik Dergisi 22 / 1 (Mart 2019): 63-67 .
AMA Güllü H. H. , Yıldız D. E. Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode. Politeknik Dergisi. 2019; 22(1): 63-67.
Vancouver Güllü H. H. , Yıldız D. E. Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode. Politeknik Dergisi. 2019; 22(1): 63-67.
IEEE H. H. Güllü ve D. E. Yıldız , "Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode", Politeknik Dergisi, c. 22, sayı. 1, ss. 63-67, Mar. 2019, doi:10.2339/politeknik.389636
Politeknik Dergisi
  • ISSN: 1302-0900
  • Yayın Aralığı: Yılda 4 Sayı
  • Başlangıç: 1998

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