Elektron Demet ile Işınlanmış PTCDA Arayüzey Tabakalı Au/PTCDA/n-Si Diyotların Elektriksel Özellikleri

Bu çalışmada, geleneksel Au/n-Si Schottky Diyotların (SDs) aygıt performansının ışınlanmış PTCDA arayüzey tabakası kullanılarak yenilikçi bir yaklaşımla iyileştirilmesi amaçlanmıştır. Bu nedenle ilk olarak PTCDA tozları 30kGy, 60kGy ve 100kGy farklı elektron demet (E-Demet) dozlarında ışınlanmıştır ve sonuçlar FTIR yöntemi ile analiz edilmiştir. Işınlanmamış ve ışınlanmış PTCDA tozları n-Si alttaş üzerine organik buharlaştırma sisteminde kaplanmıştır. Farklı dozlarda E-Demet ile ışınlanmış ve ışınlanmamış PTCDA arayüzey tabakalı Au/PTCDA/n-Si SD’ların Akım-Gerilim (I-V) karakteristikleri ±3V arasında oda sıcaklığında gerçekleştirilmiştir. Aygıtların idealite faktörü(n), Schottky engel yüksekliği (FBo), doğrultma oranı (DO), seri direnç (Rs) ve Şönt direnci (Rsh) parametreleri I-V sonuçlarından hesaplanarak elde edilmiştir. 30 kGy ışınlanmış PTCDA arayüzey tabakalı Au/PTCDA/n-Si SD aygıt performansının ışınlanmamış PTCDA arayüzey tabakalı Au/PTCDA/n-Si SD’a göre daha iyi olduğu deneysel olarak gözlenmiştir. Au/PTCDA/n-Si SD’un I-V karakteristiklerinin ışınlama ile oldukça etkilendiği ve uygun ışınlama dozu ile aygıt performansının artırılabileceği gözlemlenmiştir.

Anahtar Kelimeler:

Au/PTCDA/n-Si, PTCDA arayüzey tabakası, Schottky diyotlar, E-Demet ışınlama

The Electrical Properties of Au/PTCDA/n-Si Diodes with Electron Beam Irradiated PTCDA Interfacial Layer

In this work, it is aimed to improve the device performance of traditional Au / n-Si Schottky Diodes (SDs) with an innovative approach using the irradiated PTCDA interfacial layer. For this reason, first PTCDA powders were irradiated with different electron beam (E-Beam) doses of 30kGy, 60kGy and 100kGy and the results were analyzed by FTIR method. Unirradiated and irradiated PTCDA powders with E-Beam were evaporated on n-Si substrate via organic evaporator. Current-Voltage (I-V) characteristics of unirradiated and irradiated Au/PTCDA/n-Si SDs with PTCDA interfacial layers irradiated with different E-Beam doses of 30kGy, 60kGy and 100kGy were carried out between ±3V at room temperature. The ideality factor (n), Schottky barrier height (FBo), rectification ratio (DO), series resistance (Rs) and shunt resistance (Rsh) of devices were calculated from current-voltage (I-V) results. It is experimentally seen that performance of Au/PTCDA/n-Si SD irradiated with 30 kGy has better results when we compared unirradiated Au/PTCDA/n-Si SD. It has been observed that the I-V characteristics of the Au/PTCDA/n-Si SD are highly influenced by irradiation and the device performance can be improved with appropriate irradiation dose.

Keywords:

Au/PTCDA/n-Si, PTCDA interfacial layer, Schottky diodes, E-Beam irradiation,

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